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Experiment

Experiment. Sol-gel on chip process. “Double layer non-hydrolytic reaction process” Reaction between deposited precursor layers. Zinc acetate. Zinc tin oxide. Annealing. Tin tert -butoxide. Substrate. Substrate. Non-hydrolytic reaction.

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Experiment

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  1. Experiment Sol-gel on chip process “Double layer non-hydrolytic reaction process” Reaction between deposited precursor layers Zinc acetate Zinc tin oxide Annealing Tin tert-butoxide Substrate Substrate Non-hydrolytic reaction Zn(OAc)2 + Sn(OtBu)4 → ZnSnO3 + BuOAc Objective: Apply non-hydrolytic ester-elimination process to sol-gel ZTO Hydrolysis reaction is not required

  2. Experiment Sol-gel on chip process Reactivity Zinc acetate + Tin tert-butoxide + methoxyethanol (in dry glovebox) ← Pricipitates oxide gel (without humidity) “Sufficient reactivity”

  3. Experiment Double layer spin-coating A: Zinc acetate B: Tin tert-butoxide A B Uniform coating Substrate B Dissolve bottom layer Poor coating A Substrate

  4. Experiment B Dissolve bottom layer Poor coating A Substrate 1h annealing 2.5h annealing

  5. Experiment A B Uniform coating Substrate 1h annealing 2.5h annealing

  6. Experiment “Sufficient annealing time is required for layer intermixing” B B ZTO ZTO A A Substrate Substrate Substrate “Molar ratio of spin-coated precursors must be matched precisely” Zinc acetate (2 acetic group) : Tin tert-butoxide (4 butoxyl group) = 2 : 1 Ratio > 2:1 Ratio < 2:1 Zinc tin oxide + Zinc acetate Zinc tin oxide + Tin tert-butoxide Substrate Substrate

  7. Experiment Additional wet annealing → Negative Vth shift → SnO2 formation Dry annealing Dry+Wet Zinc acetate : Tin tert-butoxide < 2 : 1

  8. Experiment Experiments in progress

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