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Examples of SiC Sensor R&D Activities

Examples of SiC Sensor R&D Activities. Mehran Mehregany and Srihari Rajgopal NATO RTO, Granada, Spain, October 6, 2005. Current SiC Sensor Device Research. Pressure sensors On-demand production by Kulite R&D by FLX Micro, STMicroelectronics, Sienna Tech.

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Examples of SiC Sensor R&D Activities

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  1. Examples of SiC Sensor R&D Activities Mehran Mehregany and Srihari Rajgopal NATO RTO, Granada, Spain, October 6, 2005

  2. Current SiC Sensor Device Research • Pressure sensors • On-demand production by Kulite • R&D by FLX Micro, STMicroelectronics, Sienna Tech. • Various govt. and academic (NASA, Case, TU Berlin, TU Delft) • Accelerometer • Various academic (Case, NASA, TU Delft) • Gas sensors • Research by AppliedSensor (S) for automotive exhaust gas and various academic • Availability >> 5 years • UV sensors (market < $500K) • Two devices (sglux, IFW) available, based on Cree chips • Small area limits applications • Radiation sensors • Prototype by Westinghouse (Siemens) Gas sensor from Boston Microelectronics UV sensor from IFW Pressure sensor from Kulite Source: www.wtc-consult.de September 12, 2005

  3. Si Fuel Atomizers • Example: Micromachined Fuel Atomizers • Achieve precise geometries through micromachining • Reduce cost through batch fabrication

  4. Si Fuel Atomizers Fail SEM photo of edge after erosion Point of highest wear occurs at the edge of the exit orifice. The rest of the swirl chamber floor is largely unaffected.

  5. SiC Fuel Atomizers Fabricate a mold by DRIE of a Si wafer Fill with SiC, polish and etch the Si

  6. SiC Fuel Atomizers Pass Before After

  7. Pressure Sensor – Bulk micromachining Kulite/NASA example: – Suspended membrane with piezoresistive elements – Anisotropic reactive ion etch of 6H-SiC substrate Source: Leadless sensor packaging for high temperature applicationsMasheeb, F.; et al.,MEMS, 2002

  8. Accelerometer – Bulk micromachining NASA example: – Suspended membrane with piezoresistive elements – Anisotropic reactive ion etch of 6H-SiC substrate Source: Ken Bradley 48th Annual NDIA Fuze Conferece, NC April 28, 2004

  9. Accelerometer – Test Results Source: Ken Bradley 48th Annual NDIA Fuze Conferece, NC April 28, 2004

  10. Gas Sensors • Gas molecules or reaction species diffuse to the metal-insulator interface and form a polarized layer • This acts as an applied potential to the gate region • Variations in the composition of the gas shift the sensor voltage to a higher or lower value MISiCFET (MI – metal insuator

  11. Packaging • Thermal conductivity • Minimize thermal resistance in packaging components • Thermomechanical compatibility • Minimize difference in coefficient of thermal expansion between components during assembly and operation • Thermal shock resistance • Ability to withstand sudden thermal excursions during service • Chemical compatibility • Inhibit electromigration in conductors and metallization reaction with the SiC semiconductor • Hermiticity • Hermetic seal • Simplicity, size and weight • Preferably light-weight with small form factor

  12. Example – Leadless Packaging of Pressure Sensor Source: Leadless sensor packaging for high temperature applicationsMasheeb, F.; et al.,MEMS, 2002

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