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Power Factor Correction in Switch Mode Power Supplies

Power Factor Correction in Switch Mode Power Supplies. Using the SiC Schottky Diode. Team. Team Leader Robin Kelley Team Members Travis Brignac Clinton Livingston. Abstract.

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Power Factor Correction in Switch Mode Power Supplies

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  1. Power Factor Correction in Switch Mode Power Supplies Using the SiC Schottky Diode

  2. Team • Team Leader • Robin Kelley • Team Members • Travis Brignac • Clinton Livingston

  3. Abstract • Design a switch mode power supply with a new power factor correction circuit, which implements the SiC Schottky diode. • Issue Application Note detailing use of the SiC Schottky diode in power factor correction

  4. Motivation • Current power supply technology, uses Si pn junction diodes. • These Si pn junction diodes create reverse recovery current problems within the power factor correction (PFC) circuitry • SiC Schottky diode will eliminate reverse recovery current in PFC circuitry

  5. Comparison: Si pn vs. SiC Schottky • Reverse biased pn junction diode does not turn off fast enough during switching • This is due to the removal of excess carries from the depletion region • Causes reverse recovery transient

  6. Comparison (cont.) • SiC Schottky diodes do not need to remove excess carries from the depletion region • Eliminates reverse recovery transient.

  7. Implementation • Switch mode power supply industry is extremely vast • Need one specific application for implementation of new PFC circuitry • Electronic Ballast will be used for implementation

  8. System / Hardware 120V AC

  9. Design Constraints • Power Factor Correction circuit operation of 100kHz • Smaller passive components • More efficient circuitry • Operation in Continuous conduction mode • Reduced EMI problems • EMI Filter operational at 100kHz • DC-AC Inverter operation at 100kHz • As frequency increases lamp efficiency increases

  10. Design Constraints • Ballast must operate below IEC 1000-3-2 Class C harmonic limitations of 30% • Meet power loss and efficiency factor of 87% seen in current ballast design • Product will operate according to North American 120V/60Hz operation

  11. Design Constraints • Operating Temperature range of –20º to 50 º C • Product will not exceed standard electronic ballast measurements of 8.3” x 2.22” x 1.6” • Develop application note for use of the SiC Schottky diode

  12. Testing Specifications • Software • P-Spice - used to layout original circuit design and run initial simulations • Orcad Layout Plus – used to layout board design for circuitry • Hardware • O-scope – used to plot waveforms of voltages and currents to determine correct operation of each stage of circuitry, detect noise and transients. • Digital Multi-meter- used to measure and insure correct voltage and current levels • Thermo-couple- used to measure operating temperature of circuitry

  13. Testing Specifications

  14. Current / Future Work • Finalizing component sizing and selection • Working on circuitry design • P-Spice Simulations to complete design

  15. Project Deliverables • Electronic ballast with operational PFC circuitry using the SiC Schottky diode, redesigned EMI filter, and Inverter based on an operating frequency of 100kHz. • Applications Note detailing the entire design process of the project and promoting the use of the SiC Schottky diode in power factor correction.

  16. Acknowledgments • Thank You to Dr. Michael S. Mazzola, our advisor, for his guidance and input. • Thanks to Jim Gafford, Dr. Joseph Picone, Bill Buchanan and Wey Beng for their support

  17. Questions?

  18. References • [1] H. Kapels, I. Zverev, R. Rupp, and L. Lorenz, “SiC Schottky diodes: A Milestone in hard switching applications,” Application Note, Infineon Technologies, 2001. • [2] Marco Scherf and Ilia Zverev, “200W SMPS Demonstration Board,” Application Note, Infineon Technology, v1.2, November 2001. • [3] M. Bairanzade, “Electronic Lamp Ballast Design,” Application Note, Motorola, 1995. • [4] “SWITCHMODEPower Supplies Reference Manual and Design Guide,” Manual, ON Semiconductor, Rev.3, July 2002. • [5] “Infineon Technologies Produces World’s first Power Semiconductors in Silicon Carbide,” http://www.infineon.com/news/press/102-019e.htm, Infineon Technologies AG, Muenchen,Germany, February 5, 2001 • [6] C. Miesner, R. Rupp, H. Kapels, M. Krach, and I. Zverev, “thinQ!™ Silicon Carbide Schottky Diodes: An SMPS Circuit Designer’s Dream Comes True!,” Technical White Paper, Infineon Technology, Infineon Technologies AG, September, 2001. • [7] Ming Hian Chew, “Design of Power Factor Correction Circuit Using GreenlineE Compact Power Factor Controller MC33260,” Application Note for AND8016/D, ON Semiconductor, June 2002. • [8] Product Information E2/32IS-120 Two Lamp Operation, 120V, Howard Industries, Inc., February 2001.

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