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Compound Semiconductor Devices and Circuits Committee

Compound Semiconductor Devices and Circuits Committee. Giovanni Ghione CSDCTC Chair EDS 2012 Mid-Year AdCom Meeting June 2-3 Leuven, Belgium. The committee. Giovanni Ghione Politecnico di Torino Supriyo Bandyopadhyay Virginia Commonwealth Univ.

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Compound Semiconductor Devices and Circuits Committee

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  1. Compound Semiconductor Devices and Circuits Committee Giovanni Ghione CSDCTC Chair EDS 2012 Mid-Year AdCom Meeting June 2-3Leuven, Belgium

  2. The committee • Giovanni Ghione Politecnico di Torino • Supriyo Bandyopadhyay Virginia Commonwealth Univ. • Kevin Chen Hong Kong Univ. Of Science & Technology • Albert Chin National Chiao Tung University • Suman Datta Pennsylvania State University • Shadi A. Dayeh Los Alamos National Laboratory • Lorenzo Faraone University of Western Australia • Gaudenzio Meneghesso University of Padova • Rebecca J. Nikolic Lawrence Livermore National Library • Fan Ren University of Florida • Micheal Schlechtweg Fraunhofer Institute IAF

  3. What we do…. • Regular meetings • Conference review in the CS area • Proposal for journal special issues • Keynote papers in the ED Society Newsletters • Anything else?

  4. Special T-ED issue on GaN Electronic Devices Guest Editors: Kevin J. Chen, Hong Kong University Of Science and Technology, Hong Kong Takashi Egawa, Nagoya Institute of Technology, Nagoya, Japan Giovanni Ghione, Politecnico di Torino, Italy Gaudenzio Meneghesso, University of Padova, Italy Tomás Palacios, Massachusetts Institute of Technology, Cambridge, USA Ruediger Quay, Fraunhofer, IAF, Germany Paper Submission Deadline:April 30, 2013 Scheduled Publication Date: October, 2013

  5. Topics • Technology and materials: Development of bulk GaN wafers and homoepitaxial devices, Si-compatible GaN transistor technology, GaN on SiC technology, self-aligned GaN transistors, GaN-based E-D mixed-signal technologies, non-polar and N-Polar GaN, alternative alloys to AlGaN/GaN (e.g. InAlN/GaN, InAlGaN/GaN, InGaN channels), Heterogeneous integration of GaN and Si devices. • Devices: High frequency GaN devices, GaN-based RF MMICs, GaN-based power switching devices, GaN RF switches, resonators and filters; sensors and actuators; • Applications: High efficiency, high speed power switching applications of GaN-based devices; RF wave applications of GaN-based devices, including power, high-efficiency, high-gain and low-noise amplifiers, RF switches, mixers, oscillators, integrated circuits; mixed-signal applications. • Modeling, simulation, reliability and characterization: Characterization and reliability of GaN devices, physics-based simulation of GaN –based alloys and devices, thermal management of GaN-based devices and circuits, circuit modeling of GaN-based active and passive IC devices, compact modeling of GaN transistors.

  6. Thanks!

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