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THGEM-process Rui De Oliveira RD51 22/11/2011 WG6

THGEM-process Rui De Oliveira RD51 22/11/2011 WG6. THGEM PROCESS STEP BY STEP. Base material selection Drilling De-smearing Brushing Micro etching Curing Soft de-smearing Cleaning Testing. Base material Drilling De-smearing Brushing Micro etching Curing Soft de-smearing

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THGEM-process Rui De Oliveira RD51 22/11/2011 WG6

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  1. THGEM-process Rui De Oliveira RD51 22/11/2011 WG6 Rui De Oliveira

  2. THGEM PROCESS STEP BY STEP • Base material selection • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing Rui De Oliveira

  3. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • Any base material can be used • The technical reasons for a particular choice are not yet clear • At CERN we have imposed ISOLA DE156 (halogen free) • The copper thickness should be at least 2 times larger than the RIM • Other possible Base material : • Glass epoxy • Glass Polyimide • Glass Teflon • Pure polyimide • Ceramic Teflon • Poly-aramid epoxy Rui De Oliveira

  4. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • All the parameters from drill supplier should be respected: • Spindle speed • Z axis speed • Max hole count per drill bit • Correct entry and output foils/boards should be selected • Avoid stack drilling Rui De Oliveira

  5. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • This step is needed to remove thin layers of epoxy deposited • on copper edges during drilling escape • -6 baths are needed: • sweller(60deg, 6 min) • DI water rinse • potassium permanganate (200gr/l @80deg, 10min) • DI water rinse • neutralizer(H2O2 + H2SO4) • DI water rinse • - This process can be replaced by a plasma treatment Do not start to play with chemistry if you are not a chemist DI water : 10Mohms Rui De Oliveira

  6. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • This step is needed to round the edges of the metal • -At CERN we use a conventional brushing machine . • - we brush the pieces in the 4 directions • -many times till we see clearly the rounding effect • - The abrasive agent is neutral pumice Rui De Oliveira

  7. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • This step is needed to reduce the copper thickness and create the rim • -Different chemistries can be used • -Ammonium persulfate (Rim up to 40um) • -Chromic Acid (Rim up to 10um) • -Ferric perchloride (Rim up to 100um) • This step could be performed in a dead bath with lateral agitation • The piece should be inspected during the process to reach the • desired value Rui De Oliveira

  8. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • A lot of base material are not fully polymerized • -To complete this curing : • 180 deg in air during 3 hours • curing horizontally or vertically Rui De Oliveira

  9. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • This step is needed to remove a thin layer of epoxy exposed • to chemistries in the holes during precedent processes • -4 steps are needed: • High pressure DI water rinse • potassium permanganate dip (200gr/l @60deg, 3min) • DI water rinse • neutralizer dip (H2O2 + H2SO4) • High pressure DI water rinse • - This process can also be replaced by a plasma treatment Do not start to play with chemistry if you are not a chemist DI water: 10 Mohms Rui De Oliveira

  10. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • This step is needed to passivate the copper • -3 steps are needed: • High pressure DI water rinse • Chromic acid dip (30sec) • High pressure DI water rinse • -Drying @ 100deg during 1h • -If an oxide grows during drying , repeat the above steps Rui De Oliveira

  11. Base material • Drilling • De-smearing • Brushing • Micro etching • Curing • Soft de-smearing • Cleaning • Testing • 2 parameters to measure: • -sparking voltage  should follow Pashen curves • the rim should be taken in account • -leakage current @ 90% of the sparking voltage • should be smaller than 10nA in air @ 35% RH • -The sample should stabilized at room temp at least 1 h before testing Rui De Oliveira

  12. Thank you Rui De Oliveira

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