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Marco Butti New Business Development 20 th October 2010

Epitaxial Process Technology for Silicon Carbide. Marco Butti New Business Development 20 th October 2010. Today ’s talks. SiC introduction, The 5 “ Wh ” questions SiC Substrates & SiC Epitaxy Process Hardware Defectivity Conclusion. Today ’s talks.

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Marco Butti New Business Development 20 th October 2010

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  1. Epitaxial Process Technology for Silicon Carbide Marco Butti New Business Development 20th October 2010

  2. Today’s talks... • SiCintroduction, The 5 “Wh” questions • SiC Substrates & SiCEpitaxy • Process • Hardware • Defectivity • Conclusion

  3. Today’s talks... • SiCintroduction, The 5 “Wh” questions • SiC Substrates & SiCEpitaxy • Process • Hardware • Defectivity • Conclusion

  4. WhySiC? What & Why? Source: SiCED Source: NIPPON STEEL

  5. Where & Who? Source: Yole Note: Some examples of SiC users (not exhaustive)

  6. Where? Main Devices Typical example of basic devices using SiC JFET MOSFET Schottky Diodes Gate Gate Source Source Source Source n+ n+ n+ p p p p n- n- n- n+ n+ n+ Drain Drain

  7. When? Source: Yole SiC 2010 (October 2009)

  8. Epitaxy, in-house or outsource?

  9. Today’s talks... • SiCintroduction, The 5 “Wh” questions • SiC Substrates & SiCEpitaxy • Process • Hardware • Defectivity • Conclusion

  10. Manufacturing Process Source: Yole

  11. SiC Substrates: polytypes • Tetrahedral structure • different stacking sequences • Most used is 4-Hexagonal

  12. Types of Epitaxy

  13. SiC Epi Typical Recipe Application: 5 micron Epi growth for Schottky Diodes • Process Temperature: ～1700°C • Process Gases: SiH4, C3H8, H2, N2 • Growth rate: 5μm/hour • Process time: ～ 2 hours (Without loading/unloading) Epi Growth Ramp-up to 1700°C Ramp-down 30 minutes 60 minutes 30 minutes Source: TEL

  14. SiC Epi Growth Mechanism Carbon Silicon C3H8 C2H2(g) H2 （>1200℃） Radical SiH2(g) SiH4 H2 Radical Si(g) H2 C2H2(g) （400-700℃） SiC H2 Si(g) Etching （>1400℃） SiC EpiStep growth Si(s) H2 H SiC(s) C （>a few Torr） Migration Etching SiCSubstrate （4H-SiC 4°off Substrate） Source: TEL

  15. SiC Epi Doping N-type & P-type Doping • N-type most used is N2 • P-type most used is TMA N-Doping density uniformity Average Density = 1.90×1016/cm3 Uniformity = 3.67%（1σ/mean） ±5.90%（Max-min/mean) N-type doping range: 5.0 x 1015- 1.90×1016/cm³ Source: KTH (Kungl Tekniska Högskolan)

  16. SiC Epi HotWall Process Chamber Hardware Concept COIL Holder Susceptor Wafer Gases Good uniformity thickness and doping (WIW,WTW,RTR) Temperature profile is uniform all over Susceptor

  17. 3” 4H-SiC 4°off WiW Uniformity Thickness Uniformity N-Doping density uniformity 2.05 2.00 1.96 1.93 12/8 内側 1.91 2.02 1.85 1.83 2.00 1.85 1.86 2.01 1.83 1.87 1.83 1.96 1.85 1.85 1.86 1.85 1.83 1.84 1.88 1.95 ×1016/cm3 Thickness Measurement : FTIR Average Density = 1.90×1016/cm3 Uniformity = 3.67%（1σ/mean） ±5.90%（Max-min/mean) Average Thickness = 5.011μｍ Uniformity = 0.478%（1σ/mean） ±1.078%（max-min/mean) (E.E = 5mm)

  18. 3” 4H-SiC 4°off W2W & R2R Results Note: Thickness= FTIR, Doping=Mercury probe (E.E = 5mm)

  19. SiC Epi Typical Defects Basal Plane Screw Threading Edge Down Fall Tri-angular Defect Source: TEL

  20. Auto Process Sequence To reduce defectivity Process Module 1 Process Module 2 • Flexible operation: • Dual process running • 6inchx6 operation Wafer • Auto Wafer handling mechanism • -13 Holders x 2 cassette • Easy wafer size conversion • Continuous processing w/o chamber vent Holder LP1 LP2

  21. 3” 4H-SiC 4°off Substrate Defect density reproducibility Defects dencity(pcs/cm2) Accumulated thickness (um) Down Fall, triangle defects <0.7pcs/cm2 Chamber cleaning is recommended every 150um accumulated thickness

  22. About Roughness Issue Roughness (AFM) 5x5um measurement point wafer center±20mm RMS=2.219nm RMS=3.003nm RMS=0.346nm Ra: 0.192nm

  23. Today’s talks... • SiCintroduction, The 5 “Wh” questions • SiC Substrates & SiCEpitaxy • Process • Hardware • Defectivity • Conclusion

  24. TEL Solution: Probus SiCTM • Platform up to 2 chamber • Load Lock＆Vacuum transfer system • Wafer size: 3inch x10, 4inch x7, 6inch x3 • N-type (P-typefrom Jan 2011) • Superior temperature control • Enhanced stability & repeatability • High troughput Developed by Joint Research Program between Kyoto University , Rohm & TEL. Acknowledgements to Prof. T. Kimoto/Kyoto Univ. & Dr. T. Nakamura/Rohm

  25. TEL Solution: Probus SiCTM • Very low defect density and very stable control • Excellent thickness & doping uniformity & repeatability • Fully automatic handling

  26. TEL brings the blue and the green together Beautiful sky and plentiful earth come together to form the environment. TEL brings the blue and green together. Contacts: marco.butti@europe.tel.com marie-caroline.rauzy@europe.tel.com

  27. Thankyou!

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