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Universal Microsystems

Universal Microsystems. Gas Flow Restrictors for the Semiconductor Industry Company founded in 1999 Partnership with TEM Filter 3350 Scott Blvd. Santa Clara, CA. Replace MFC in fixed process applications steady pressure, single flow set point Safety — limit flow in case of line failure

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Universal Microsystems

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  1. Universal Microsystems Gas Flow Restrictors for the Semiconductor Industry Company founded in 1999 Partnership with TEM Filter 3350 Scott Blvd. Santa Clara, CA

  2. Replace MFC in fixed process applications steady pressure, single flow set point Safety — limit flow in case of line failure Tamperproof needle valve replacement Flow splitting eliminates multiple MFCs Back fill a chamber in a fixed time Uses for Gas Flow Restrictors

  3. Orifice inside 316L SS container High accuracy calibration (± 1.0%) Three orifice materials available SS, & Single crystal sapphire or silicon Quick turn production UMS Gas Flow Restrictors

  4. Orifice Flow vs Pressure

  5. Completely stable No Particle Generation Minimal dry down time Precision of flow at specified pressure +/- 5% standard, +/- 2% available Orifice will not clog like a filter Orifice Characteristics

  6. Restrictor body types available 1/4 “ Male/Male VCR 1/8” Male/Male VCR 1/4” Female/Male VCR 1/4” BulkHead VCR Ni media Filter/Restrictor Combination 1 1/8” surface mount sandwich

  7. B-Series M/M VCR Flow Restrictor .625” 22-161414-00 .75” 1.55” • VCR Male Union • Flow Direction Arrow • External Part No. Label

  8. F/M or M/F Versions • Gland to gland 1.80” • Diameter 0.75” • Wrench Flats 5/8”

  9. Filter/Restrictor Combination Precise flow at a specified pressure • Specifications • No more than 1 particle/ft3 • Less than 10 ppb THC • Less than 10 ppb moisture • 99.9999999% removal rating at rated flow • He leak check to 10-9 atm sccm/sec

  10. Top ¼” Flow Surface Mount Sandwich Restrictor • Restrictor can be inserted into either port • 3 Port version available 2-port IGS configuration1 1/8” body size

  11. Surface finish, 7-8 Ra electropolish Base Material, 316L SS, Orifice material, Si, Sapphire, or SS Seal for Si (Viton or Kalrez) He leak check 10-9 atm-cc/sec Maximum pressure, 200 psia Temperature range, 50 to 250 oF UMS Flow Restrictor Specifications

  12. Sapphire Orifices • Orifice diameters from 0.003” to 0.040” • Variation in diameter is +/- 2.5µm • Different manufacturing runs likely to see different means but tight distribution Nozzle side Cross-Section -2.5 µm +2.5 µm

  13. Used for diameters < 0.003” or non-integer .001” units Flow from nozzle side 10-15% greater Avoid placing downstream from F plasma Option: sputter deposit Al203 (both sides) Opportunity to enlarge undersized orifices Oxidation and strip - 50 - 1000 nm Cross-section nozzle side 50 µm Silicon Orifices

  14. Mechanical drill OK down to 0.030” Use EDM down to 0.004” EDM precision is +/- 1.5% at .008” EDM most expensive of three types Cross-section 250 µm Stainless Steel Orifices

  15. Standard Orifices & N2 flow @ 20 psig • Flow range -15 sccm to 40 slm • Flow steps in ~ 10% • Sapphire orifices designated with N or R, SS orifices with F and Si orifices with S • N orifices nozzle side inletR orifices nozzle side outlet

  16. How to find required orifice • This procedure converts the application gas flow at the application pressure into the equivalent N2 flow at 20 psig • Match the converted flow to the flow table

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