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Resonant Tunneling Diodes. ECEN 3913. Standard Tunneling Diode. Image: Coles , Matthew, and Samuel Glasenapp . "Indirect Electron Tunneling in Germanium Using a Current to Detect Resonant Phonon Energies .“ University of Minnisota . University of Minnisota , Spring 2013. Web. 01 May 2014 .
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Resonant Tunneling Diodes ECEN 3913
Standard Tunneling Diode Image: Coles, Matthew, and Samuel Glasenapp. "Indirect Electron Tunneling in Germanium Using a Current to Detect Resonant Phonon Energies.“ University of Minnisota. University of Minnisota, Spring 2013. Web. 01 May 2014.
Effects of Forward Bias Voltage Source: Wikipedia (via nanoHUB applet)
RTD vs HEMT • RTDs operate at much higher frequencies • HEMT current gain up to 600 GHz and power gain up to 1 THz • RTD can efficiently provide gain (power and current) up to about 2.5 THz • Resonant tunneling diodes rely on quantum tunneling through very thin layers, which is a very fast process • RTD is a low powered device compared to HEMT • Likely caused by size • RTD: Around 150 nanometers http://www.nextnano.com/nextnano3/tutorial/1Dtutorial_RTD_green.htm Sze, S. M., and Kwok Kwok Ng. Physics of Semiconductor Devices. New Dehli: Wiley-India, 2007. Print.
Peak-Valley Current Ratio 13 • ≈3 for typical circuit applications • Si/SiGe have a PVCR of about 4 (up to 6 has been produced) • In0.53Ga0.47As/AlAs can (theoretically) reach a PVCR of 43 • Increasing the doping in an RTD can potentially decrease the PVCR. 18 Su, Yan-Kuin, Cheng-Hsien Wu, Jia-Rong Chang, Kuo-Ming Wu, Hsin-ChuanWang, Wen-Bin Chen, Shin-Jie You, and Shoou-Jinn Chang. "Well Width Dependence for Novel AlInAsSb/InGaAs." Elsevier. N.p., 3 Jan. 2002. Web. 30 Apr. 2014. Image: http://www.nextnano.com/nextnano3/tutorial/1Dtutorial_RTD_green.htm
Another Point of View (RTD) Image: Public Domain.