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Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples. Elisabetta Cesarini a,b) , Gianpietro Cagnoli a,c) , Enrico Campagna a,d) , Matteo Lorenzini a,b) , Giovanni Losurdo a) , Filippo Martelli a,d) ,
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Investigation on annealing effect in a Suprasil sample and loss measurements in silicon samples Elisabetta Cesarinia,b), Gianpietro Cagnoli a,c), Enrico Campagna a,d), Matteo Lorenzini a,b), Giovanni Losurdo a), Filippo Martelli a,d), Francesco Piergiovanni a,d) , Flavio Vetrano a,d) INFN Sez. Firenze Università di Firenze (Dip. Astronomia e Scienza dello Spazio) University of Glasgow Università di Urbino 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Summary • Last ILIAS-GW meeting 26-27 October 2006 we presented: • Q measurement facility • Innovative nodal suspension, designed and realized (GeNS) • Now: • We are measuring the loss angle of different interesting materials: • Herasil • Suprasil (annealed sample, that we are investigating with surface analysis) • Silicon (we are trying to calculate the thermoelastic contribution to fit our measurements) 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Dissipation measurements on Suprasil samples SAMPLE: Suprasil 311disk 75x3 mm Sapphire sphere D= 4.75 mm Contact surface (radius 20 mm) Q does not depend on suspension centering, in a single suspension, in the region between -30μm e +30μm with a contact surface of ~20 μm 7890 Hz 2° Butterfly mode 3469 Hz 1° Butterfly mode 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
FI samples Similar samples V/S = 1.3875 μm φPenn= 2 · 10-8 QPenn = 50 millions Qexp = 20 millions Taken from Mechanical Loss in Fused Silica Steve Penn Hobart and William Smith Colleges LSC Meeting, March 2006 LIGO DCC LIGO-G0601 40-00-Z Dissipation measurements on Suprasil samples Measurement after the annealing: Q(3469Hz)=2·107 • Anneal in air (suggested by S.Penn): • Raise the oven temperature to the annealing point (1120°C for Suprasil) • Cool down to the strain temperature (1025°C for Suprasil) with a rate of about 10 degrees per hour • -Turn off the oven and wait for cool down in 24 hours First measurement: Q(3469Hz)=2.7·106 it is smaller by a factor two!! 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Annealing study Is the Q value increasing due to an internal or a surface effect? Surface Analysis In collaboration with: INFN sezione Genova and Università di Genova Ellipsometry and XPS … still under investigation … counts/s Binding Energy (eV) 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Dissipation measurements on silicon samples RESULT SUMMARY • Samples: • 75x1 mm • 75x3 mm sapphire sphere (d=4.76 mm) • 75x10 mm sapphire sphere (d=15-20 mm) Bad reproducibility of measurements in different suspensions CLEANING PROCEDURE We have to work in a clean room!!! 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Dissipation measurements on silicon samples Taking into account only the maximum values … WHAT IS HAPPENING? 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Thermoelastic contribution calculation Thermoelastic contribution for a disk of finite dimensions • Previous calculations : • - F. Bondu, P. Hello, J.Y. Vinet, Phys. Lett A 246 (1998) 227 • Y.T. Liu and K.S. Thorne, Phys. Rev. D 62 (2000) 122002 • V. B. Braginsky, M.L. Gorodetski, S.P. Vyatchanin, Phys Lett. A 264 (1999) 1 How to solve the problem of the sources in a non-adiabatic condition for a cristalline material? ADIABATIC APPROXIMATION: The DT is not influenced by heat fluxes We want to simulate the vibrations of the disk with ANSYS, then take the time derivative of the deformations and put them in the diffusion heat equation. … work in progress … We want to calculate exactly the thermoelastic contribution without any approximation What is our idea? 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007
Next work… • New surface analysis after the annealing, trying to understand if the produced effect is internal or superficial. • Calculation of the thermoelastic contribution in silicon disks, without any approximation. • New loss measurements of the silicon samples with different thickness (in collaboration with Jena University). • Measurements of mechanical properties of coated samples suitably altered or damaged. 4° ILIAS-GWA Annual Meeting- Tubingen (D), October 8-9, 2007