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Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors

Investigating the effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors. The study explores changes in charge collection efficiency, electric field, multiplication effects, and trap times. Results show increased charge collection after long-term annealing, minimal influence in forward bias, and enhanced multiplication effects during annealing. The study also correlates increased leakage current with charge collection changes.

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Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors

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  1. Effects of annealing on charge collection in heavily irradiated silicon micro-strip detectors G.Kramberger, V.Cindro, I.Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik

  2. Motivation • Long-term annealing does not seem to be as harmful as at lower fluencies (measured by Liverpool, UCSC, IJS) • New method used to investigate CCE – Edge-TCT (see previous talk) • Multiplication effects could be influenced by • τeffchanges • Electric field changes. • Forward bias?

  3. Experimental Setup • Detector: • Manufacturer: Micron (RD50 Micron run) • Type: FZ Si, p-type micro-strip, initial VFD≈16V • Irradiation fluence: 5x1015 neutrons/cm2 (by TRIGA) • Setup(see Gregor’s talk) • Peltier cooler (-20 ÷ 60 oC) • Power supply: Keithley 2410 • Wide band amplifier: MITEQ AM-1309 (10kHz-1Ghz) • Osciloscope: LeCroy 950 WavePro (1Ghz) • IR Laser: ALDS, λ=1060nm • Positioning system: Newport M-ILS100PP

  4. Experimental Setup

  5. Annealing process • Sample always annealed in the setup with the Peltier element • charge measurement (estimation of precision:a few percent) • constant laboratory temperature: 21 oC • stable position/laser (the same locations in the detector were illuminated for all annealing steps) • sample temperature stabilized to less than 1°C • Annealing at 60°C up to cumulative time of 10240 min. • After each annealing step, voltage scans from -800V up to 500V were performed

  6. Charge collection @-800V (reverse bias)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C huge increase with annealing! strips backplane

  7. How can we be sure that this is not an artifact of the setup?! • Laser stability can be verified in forward bias U=400V (where possible) backplane strips

  8. What can we seein forward direction? • Annealing process does not seem to influence charge collection efficiency • The efficiency of the detector is best at its centre • There is no peak in the electric field!

  9. <Q> vs. bias for all annealing times(MIP equivalent Q vs. bias)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C (1st proof that this is not a setup artifact) forward reverse

  10. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  11. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  12. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  13. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  14. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  15. E-TCT Measurements (reverse bias@800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  16. E-TCT Measurements (reverse bias@750V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  17. E-TCT Measurements (reverse bias@650V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  18. E-TCT Measurements (reverse bias, up to: 800V)Detector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C • Multiplication can be clearly seen in induced current pulse shapes (2nd proof that this is not a setup artifact!)

  19. Ileak vs. <Q> for all annealing timesDetector: Micron, FZ-Si p-type micro-strip, Φ=5x1015 cm-2, T=-20°C

  20. Conclusion • Charge collection efficiency increases with long-term annealing for highly irradiated (Φ≥5x1015cm-2) micro-strip detectors when reversely biased. • No effect of annealing in forward bias • Changes in charge collection due to enhanced multiplication effects induced by reduced trapping time and increased electric field during annealing • Increase in Ileak correlated with <Q>

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