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Si-strip STS: Layout

Si-strip STS: Layout. Valeri Saveliev, Obninsk State University 7-10-2001. CBM Collaboration Meeting. New Geometry of the Si-Strip STS 4 Si-Strip Planes inside the Magnet ( equivalent distances along z ). Significant Reducing the Requirements for the Si-Strip STS Design

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Si-strip STS: Layout

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  1. Si-strip STS: Layout Valeri Saveliev, Obninsk State University 7-10-2001 CBM Collaboration Meeting

  2. New Geometry of the Si-Strip STS 4 Si-Strip Planes inside the Magnet ( equivalent distances along z ) Significant Reducing the Requirements for the Si-Strip STS Design ( STS_3 is MAPS technology ) New Si-Strip STS Geometry STS_7 STS_6 STS_5 STS_4 z 100 cm 80 cm y 60 cm x 40 cm

  3. Geant 4 view of Si-Strip STS Geometry Main factors taking to account for Si-Strip STS Layout : • Occupancy • Resolutions for x & y • Fake rate production Si-strip STS Geometry

  4. Total Occupancy of Si-Strip STS STS_4, STS_5, STS_6, STS_7 (Total Number of Points on the Planes ) 100 Au+Au 25 GeV/A events Occupancy of Si-Strip STS STS_4 STS_5 STS_6 STS_7

  5. Occupancy of Si-Strip STS STS_4, STS_5, STS_6, STS_7 ( 1 cm of Central Parts along X in Modules ) 100 Au+Au 25 GeV/A events Occupancy of Si-Strip STS

  6. Keep the Point Resolution on the Level: 50 mkm Resolution of Si-Strip STS y s_x X 900 450 150 s_y = const ( 8 mkm )

  7. Fake Rate Fake Rate of Si-Strip STS

  8. Double Sided Si-Strip Detectors Thickness : 100 mkm Pitch of strips : 25 mkm Stereo Angle : 15o Inner region of Si-Strip STS: 25 mkm Pitch gives 400 strips per cm According the occupancy plots for STS_4: 10 Point per cm per event, or 2.5 % for 1 cm length strip 17 Point per cm per event, or 4.2% for 2 cm length of strip Basic Technology of Si-strip STS

  9. Outer region of the Si-Strip STS: Long Lader Technology ( SiLC Collaboration) Basic Technology of Si-strip STS Sensors are 4’’ , 300 µ thick, double-sided, 70 × 40.1 mm2, 110 µ/208µ readout pitch (p: junction side/n: ohmic side). A set of strips are connected in serpentine; thus strips with following length: 28 cm, 56 cm, 112 cm and 224 cm are tested.

  10. Basic Elements: Inner : 6x2 cm Middle : 6x4 cm Outer : 6X12 cm Si strip STS_4 Layout +20 cm -20 cm Read out

  11. Basic Elements: Inner : 6x4 cm Middle : 6x12 cm Outer : 6X20 cm Si strip STS_6 Layout +40 cm +4cm - 4cm -40 cm Read out

  12. Plans • Implementation in to MC: • New Geometry • Layout of the Si-Strip STS • Definition of the Hits Structure Test with the Reconstruction

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