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Defect characterization via DLTS

Observation of an anomalous minority carrier trap in n-type InGaAs Tim Gfroerer and Kiril Simov Davidson College, USA Mark Wanlass National Renewable Energy Lab, USA ~ Supported by Bechtel Bettis, Inc. and the American Chemical Society – Petroleum Research Fund ~. -. -. -. -. -. -. -. -.

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Defect characterization via DLTS

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  1. Observation of an anomalous minority carrier trap in n-type InGaAsTim Gfroerer and Kiril SimovDavidson College, USAMark WanlassNational Renewable Energy Lab, USA~ Supported by Bechtel Bettis, Inc. and the American Chemical Society – Petroleum Research Fund ~

  2. - - - - - - - - - - - - + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Depletion Layer With Bias Temporary Reduced Bias Depletion Layer With Bias Temporary Reduced Bias Depletion Layer With Bias - - + + Defect characterization via DLTS P+ N

  3. Typical DLTS Measurements

  4. Computer with LabVIEW (5) Digital Scope(Tektronix) (1) Capacitance meter (Boonton) (2) (4) Oxford 77K Temp Controller (3) Pulse Generator Agilent Cryostat with sample Experimental Setup

  5. Device Structure and Band Diagram {

  6. Transient Capacitance: Escape

  7. Filling Pulse Dependence: Capture

  8. Proposed Model

  9. Testing the Model

  10. Conclusions • 0.29eV hole trap is observed in n-type InGaAs under reverse bias • Temperature-dependent capture and escape rates are symmetrical • Rates level off at cold temperatures due to tunneling • Device modeling points to defect states near the p+/n junction

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