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Some DLTS results….

Some DLTS results…. J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O. 1048 Blindern, N-0316 Oslo, NORWAY and University of Oslo, Centre for Materials Science and Nanotechnology P.O. 1128 Blindern, N-0318 Oslo, NORWAY. Department of Physics.

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Some DLTS results….

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  1. Some DLTS results…. J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O. 1048 Blindern, N-0316 Oslo,NORWAY and University of Oslo, Centre for Materials Science and Nanotechnology P.O. 1128 Blindern, N-0318 Oslo, NORWAY Department of Physics WODEAN, June-07

  2. Topics • - Neutron-irradiated samples; first results • Low temperature defect annealing WODEAN, June-07

  3. Samples – neutron irradiation P+- n- - n+ Si diodes, processed by CIS std, (8556-02) MCz <100>, 1 kΩcm, 300 µm 1 MeV neutrons at RT, 3.5x1011 and 6.7x1011 cm-2 (”DLTS”) Storage at -20 °C WODEAN, June-07

  4. Results – neutron irradiation 0.43 eV Ec-0.18 eV E4 0.23 eV

  5. Results – neutron irradiation 0.43 eV Ec-0.18 eV E4 0.23 eV

  6. Results – neutron irradiation Local Fermi level pinning??!

  7. Defect tracks in Si 3 MeV Au single ion impact Vacancy distribution Monakhov et al., Phys. Rev. B65, 245201 (2002) Vines et al., Phys. Rev. B73, 085312 (2006)

  8. Samples – LT defect annealing • P+- n- - n+ Si diodes, standard process by SINTEF • MCz, SFz – as processed • MCz, SFz – pre-annealed at 450 ºC for 1h • MCz, SFz – hydrogenated in HF + 450 ºC, 1h • 6 MeV electrons at RT, 2-5x1012 cm-2 • Storage at -20 °C WODEAN, June-07

  9. P+-n--n+ MCz diode Nd~5x1012 cm-3 6 MeV e-, 5x1012 cm-2 Bleka et al., ECS Trans 3, 387 (2006)

  10. VO, V2=/-, V2-/0 and E4 vs time at RT P+-n--n+ MCz diode Nd~5x1012 cm-3 6 MeV e-, 5x1012 cm-2

  11. Loss of VO, V2=/- and V2-/0 vs loss of E4 P+-n--n+ MCz diode Nd~5x1012 cm-3 6 MeV e-, 5x1012 cm-2

  12. Difference between DLTS spectra E5 P+-n--n+ MCz diode Nd~5x1012 cm-3 6 MeV e-, 5x1012 cm-2 E4 Ec-0.37 eV sapp~10-14 cm2 E5 Ec-0.45 eV sapp~3x10-15 cm2

  13. Further results (I) E4/E5 occur with the same relative initial concentration (~25% of [V2]) and exhibit the same annealing rate at RT irrespective of MCz(as-processed, pre-annealed, pre-annealed+hydrogenated), SFz(as-processed, pre-annealed, pre-annealed+hydrogenated) and DOFZ (as-processed, pre-annealed, pre-annealed+hydrogenated)

  14. Further results (II) • Isothermal annealing of E4/E5 at 22 °C (RT), 40.5 °C, 55 °C and 65 °C yield; • First order kinetics (exponential decay) • Activation energy of ~1.27 eV • Prefactor of ~2.1x1015 s-1 Cf values for reverse annealing by Moll et al.; Activation energy: ~1.33 eV Prefactor: ~1.5x1015 s-1 !!!!!

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