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capture of electrons in traps

Explore the capture and reemission of electrons in occupied traps in pixel sensors. Analyze charge loss under different readout modes and timing schemes.

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capture of electrons in traps

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  1. capture of electrons in traps = trap = occupied trap photon pixel pixel pixel time

  2. capture & reemission of electrons ne= density of free electrons nt0= total density of traps n0= total density of occupied traps at t=0 nec= density of captured electrons pixel trap change in captured electrons = - cn= capture probability en=emission probability

  3. solution T = temperature in K k = Boltzman constant A = temperature independent constant Eact= thermal activation energy for the emission of electrons  = capture cross section vth= thermal velocity of electrons ne = free electron density

  4. charge loss in Full Frame Mode pixel 1 pixel 2 1 2 3 1 2 3 readout: 22.5 µs shift from pixel 2 to pixel 1: 700 ns • modelling • collection of charge only under 1 • shift = store m times with t = (700 ns)/m m •  charge loss: m • nec2 • main storage under 1 with t = 22.5 µs •  charge loss: nec1

  5. charge loss in Timing Mode pixel 1 pixel 2 pixel 10 . . . . . . . . 1 2 3 1 2 3 1 2 3 readout: 22.5 µs shift from 2 to 1: 700 ns . . . . shift from10 to 9: 700 ns • compared to Full Frame: • collection of charge only under 1 • shift = store m times with t = (700 ns)/m m •  charge loss: m • nec2 • main storage under 1 with t = 22.5 µs but only every 10 pixel •  charge loss: : nec1/10

  6. e. g. for column 1 CCD 4 model • measurement

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