1 / 11

CBM Silicon Tracking System. CBM-01 sensors characterization .

V.M. Pugatch Kiev Institute for Nuclear Research. CBM Silicon Tracking System. CBM-01 sensors characterization. Thanks to coauthors: M. Borysova 1 , J.M. Heuser 2 , O. Kovalchuk 1 , V. Kyva 1 , Lymanets 1,3 , A. Melnyk 1 , V. Militsiya 1 , O. Okhrimenko 1 , A. Chaus 1 ,

leoma
Download Presentation

CBM Silicon Tracking System. CBM-01 sensors characterization .

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. V.M. Pugatch Kiev Institute for Nuclear Research CBM Silicon Tracking System.CBM-01 sensors characterization. • Thanks to coauthors: • M. Borysova 1, J.M. Heuser 2, O. Kovalchuk 1, V. Kyva 1, • Lymanets 1,3, A. Melnyk1, V. Militsiya 1, O. Okhrimenko 1, A. Chaus1, • D. Storozhik1, V. Zhora 4 • 1 KINR, Kiev • 2 GSI, Darmstadt, • 3 now at FIAS, J.W. Goethe University, Frankfurt, • 4 Institute of Microdevices (Kiev) CBM Collaboration Meeting. GSI, Darmstadt. 10.03.2009

  2. R&D: Agreement ‘KINR-GSI’ • A low-mass mechanical assembly of double-sided silicon microstrip sensors and their connection through analog readout cables to a readout electronics • construction of an experimental test stand • A quality assurance procedure suitable for a future larger detector module production.

  3. Mounting CBM01 sensor Hollows were made in a supporting frame (AEROPLAST Carbon fiber) supporting frame to allow bonding from both sides of the double-sided CBM01sensor Two-layer micro-cables were produced and bonded (IMD, Kiev) to match 50.7 μm pitch CBM01 sensor (50 x 50 mm2): Even strips – to upper layer (101.4 μm pitch); odd strips to the bottom layer (101.4 μm pitch); - the same structure for p- and n-side of a sensor.

  4. Micro-cables A double-layer micro cables • 25 µm width • 20 µm thick Al strips • 101.4 µm pitch • on 24 µm thick polyimide film have been designed and produced at the Institute of Microdevices (IMD, Kiev). Different cables of that type have been tested by implementing them for the CBM01 sensors readout

  5. Sensors characterization • CBM01B1, CBM01B2 as well as CBM01 sensors have been mounted and connected to a discrete electronics at the readout board. • Tests are performed at KINR using laser pulses (640 nm) and radioactive sources. Full Depletion Voltage- CBM01 Laser pulse amplitude at n-side strips as a function of the applied voltage (irradiation from the n-side). IV - CBM01

  6. Laser Stand - a part of the Quality Assurance System Software/hardware allows to move a laser beam over the silicon detector surface. Laser Stand (LS) for testing STS Si-microstrip detector modules has been designed and built at KINR. laser beam wavelength – 640 nm, diameter of the laser beam spot ~10 µм step in X and Y – directions (15x15 cm2) –10 µм. Response of two adjacent strips: Laser beam was moved from one strip to another.

  7. Laser beam characterization of CBM01 sensors Charge, Strip ” k” Charge, Strip “k+1” Total pulse amplitude from two adjacent strips versus detector voltage (laser beam, 640 nm, from the p-side). The figures near dots indicate the coordinate of laser spot (in μm) Two-dimensional spectra show unexpected performance of the inter-strip gap: total amplitude goes down at 40 V in comparison with unbiased sensor, linear inter-strip region gets narrower at 40 V (from 25 to few μm).

  8. Measurements with radioactive sources Ra-226, 4 lines – alpha-source. Test setup at KINR: coincident energy spectra for pairs adjacent strips Charge, Strip ” k” Interstrip gap data strips functionality charge sharing full depletion voltage leakage current Spectrum is deteriorated when a biasing voltage is applied. Amplitude of signals decreases: Unexpected performance in the inter-strip gap Charge, Strip “k+1”

  9. Sr-90 – β-source . MIP – hit trigger PM – Si-strip coincidences. Measurements with radioactive sources Sr - 90 РС – interface PC Pentium 1200 MHz PM-1 Si-det. PM-2 Test Setup built and running at the KINR for (8 x n) channels

  10. Measurements with radioactive sources90Sr – β-source (CBM01 sensors) • p-strip MIP-spectra MIP-spectra for all types of sensors have Landau-shape at low bias voltage. At bias voltage higher than 30 V it is of a gaussian shape.

  11. Summary. • Pre-Prototype Detector Modulecomponents (supporting frames, sensors, microcables, cooling) and their connections were produced and tested. • All type of CBM01 sensors: -Unexpected performance in the interstrip gap. -Long term instability of the leakage current • Supporting frames perfect features (low mass, mechanical rigidity, thermoconductivity, easy connection and geometry shaping etc.,) • Microcables (including double-layer structure) perfect electrical and mechanical features matching CBM request. • Real Modules assembly and their Quality Assurance could be provided by KINR in collaboration with IMD (Kiev), IAP (Sumy) and AEROPLAST (Kiev).

More Related