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Graphene Based Memory Device

Graphene Based Memory Device. Mason Overby. Outline. Memory device intro Motivation behind spintronic devices How to use graphene? GaMnAs-based device Can we incorporate all-in-one?. http://en.wikipedia.org/wiki/File:MagneticMedia.png. non-volatile memory devices.

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Graphene Based Memory Device

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  1. Graphene Based Memory Device Mason Overby

  2. Outline • Memory device intro • Motivation behind spintronic devices • How to use graphene? • GaMnAs-based device • Can we incorporate all-in-one?

  3. http://en.wikipedia.org/wiki/File:MagneticMedia.png non-volatile memory devices • “Permanent” memory state • Large writing currents required • Density of “grains”, read/write limiting factor GMR info on IBM site http://www.research.ibm.com/research/gmr.html

  4. Spintronics the solution? • Carrier spin used as two state device ( ) • Able to integrate computing and memory into one device utilizing charge/spin. • GMR spin-valves http://en.wikipedia.org/wiki/File:Spin-valve_GMR.svg

  5. Graphene device Ni 2 m T. Shen, A. Chernyshov

  6. compressively strained magnetization easy axes [100] and [010] H M Properties of GaMnAs φH φM I

  7. H M Properties of GaMnAs φH φM I Large resistance anisotropy transverse anisotropic magnetoresistance (TrAMR)

  8. H M Determining Magnetization Direction φH φM I

  9. (1) um (2) GaMnAs Graphene Use graphene as spin injector • Minimize spin scattering • GaMnAs polarizes current (1) • Polarized current change state (2)

  10. Limitations/difficulties • Need accurate “stamping” of graphene as conductive pads (Kim K., Nature, 475, 706 (2009)) • Lithography and plasma etch “work around” • GaMnAs Tc ~200K and below

  11. Room Temp Integrated Device • Short-term • Ni contact pad structure • Stamp grid of memory cells and evaporate Ni contacts • Potential to integrate computation and memory devices

  12. Conclusion • Several methods to incorporate Graphene into memory device design • Relies on “stamping method” or etching step • For Ni-contact device, need external magnetic field • Potential for GaMnAs device if Tc ~ RT

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