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IR laser

Novel Electrical and Ferromagnetic Properties of Vanadium Dioxide Thin Films Jagdish Narayan , North Carolina State University, DMR 0803663.

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IR laser

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  1. Novel Electrical and Ferromagnetic Properties of Vanadium Dioxide Thin Films JagdishNarayan, North Carolina State University, DMR 0803663 • We have discovered room temperature ferromagnetism (RTFM) in undoped vanadium oxide (VO2), which exhibtssharp optical and electrical transitions at 341 K. • By combining RTFM in VO2 with optical and electrical transitions, we are able to create novel multifunction solid-state devices. • The VO2 epitaxial thin films were grown on c-sapphire via paradigm of domain matching epitaxy. • The observed RTFM has its origin in valence charge defect with unpaired electrons in V+3 in VO2 thins films, where concentration of the defects could be varied with oxygen partial pressure. • The VO2 RTFM having a Curie temperature above 500 K, saturated magnetization above 18 emu/cm3, and coercivity above 40 Oe at RT, are needed for integrated smart sensors operating at RT. • Specific parameters for a sample processed at 10-2torr are given below. 1 Fig. 2 The Resistivity with the increase temperature for the VO2 film under oxygen pressure of 10-2torr.

  2. Broader Impact-Applications of VO2JagdishNarayan, North Carolina State University, DMR 0803663 • Smart window • Optical Switching • These results suggest that VO2 has tremendous potential for multifunctional device applications related to spintronics, switching, and magnetic recording. • This result had a strong education component in terms of teaching and training of undergraduate and graduate students. • Students will be exposed to advanced thin film deposition techniques, device design, material properties, crystallography, and characterization techniques. • This program involves a close collaboration with Kopin corporation, and an undergraduate student , Xiaolong Ma, from Zhejiang University IR laser • Memory device *T. Yang, N. Sudhakar, H. Zhou, and J. Narayan, APL, 95, 102506 (2009) *T. Yang, C. Jin, R. Aggarwal, R.J. Narayan, and J. Narayan, J. of Mater. Res. 25, 422 (2010) * T. Yang, R. Aggarwal, A. Gupta, H. Zhou, R. J. Narayan, and R. Narayan, J. Appl. Phys. 107, 053514 (2010) * T. Yang, C. Jin, H. Zhou, R. J. Narayan, and J. Narayan, Appl. Phys. Lett. 97, 072101 (2010)

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