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A 9.2mW 528/66/50MHz Monolithic Clock Synthesizer for Mobile µP Platforms. Custom Integrated Circuits Conference (CICC) 2005 Michael S. McCorquodale, Ph.D. Mobius Microsystems, Inc. Outline. Introduction Background Clock synthesizer reference oscillator and architecture Experimental results
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A 9.2mW 528/66/50MHz Monolithic Clock Synthesizer for Mobile µP Platforms Custom Integrated Circuits Conference (CICC) 2005 Michael S. McCorquodale, Ph.D.Mobius Microsystems, Inc.
Outline • Introduction • Background • Clock synthesizer reference oscillator and architecture • Experimental results • Conclusions and future work
Introduction • Much recent work exploring alternative technologies to XTALs for clock generation and frequency synthesis • MEMS microresonators • FBAR • Insufficient exploration of all-Si CMOS approaches • Build on recent work in free-running and open-loop compensation of LC oscillators as frequency references for clock generation
Introduction • Goals • Develop an accurate and stable clock synthesizer without an external frequency reference (i.e. XTAL or ceramic resonator) • Develop a clock synthesizer with very low frequency scaling latency • Develop a clock synthesizer with very low start-up latency • Characterize performance over PVT • Demonstrate in a multi-chip module • Approach • Explore free-running RF LC oscillators as frequency references • Utilize a “top-down” synthesis architecture
Architecture • Reference oscillator • Free-running high-QLC oscillator at a high frequency • Simple frequency trimming interface • Open loop compensation to stabilize over PVT • Very low phase noise • Very low start-up latency • Clock synthesis • Divide down to target clock frequencies • Decrease phase noise by 20log10(N) for divide by N
Ro _ RC RL + -gm + ic v i _ _ + Ro L C ic(t) i(t) gm0 t t Background • Resonant frequency • Sources of frequency drift • Real losses: RL and RC • Frequency modulation from harmonic content of driving amplifier • Filter response of LC network and amplifier output resistance
fo fmax No oscillation fmin gm gmo Background • fo vs. gm relationship • gmo → minimum gm for start-up • fo → decreases as gm increases (harmonic content increases) • fmin → approached as harmonic content approaches square wave • Can utilize harmonic modulation to self-compensate drift by modulating gm through bias current
250 215 215 430 430 2.5m 0.53 0.53 0.53 0.53 0.5 0.5 Reference Oscillator R • Complementary cross-coupled architecture with PMOS tail for low phase noise • Bias current, temperature dependent and scaled by ~10x in mirror • Resistor divider self-biases control voltage and reduces VDD sensitivity • vcal trims frequency • Reset transistors disable oscillator MRp R MRn 6.1nH 50kW +out out- vcal 300mA 50kW 0.8-2.5pF 0.8-2.5pF 3pF MRn R
1.056GHz 528MHz R 50MHz vcal EN0 66MHz EN1 Architecture ÷2 ÷10 Out BUF 1 0 S ÷8 Out • “Top-down” or divisive architecture reduces phase noise and period jitter of reference oscillator by 20log10(N) and sqrt(N) • RF reference oscillator can be started with low latency • Any available frequency can be selected asynchronously: low scaling latency
Die Micrograph • Fabricated in IBM’s 0.18mm 7RF-CMOS process • Core macro size: <0.4mm2 • Test macros populate periphery • Output drivers drive 10pF with 100ps rise/fall times at 20mArms • Wire-bonded and characterized in 16-pin ceramic DIP • Au studs for flip-chip module assembly
Temperature and Voltage Drift VDD±10% • 25°C: ±0.17% • 100°C: ±0.33% Temperature • 0 – 70°C: ±0.75% • -40 – 100°C: ±1.5% PVT Total • Best: <±1% • Worst: ~±1.5% Temp. compensation • Under-compensated • 1.6mV/°C, R2 = 0.9984
3.2ms Start-up Latency • Measured 3.2ms start-up latency from leakage only power state • Latency originates primarily from bias start-up time • Bias circuitry can be modified to reduce latency to ~ns
Period Jitter • Measured with Agilent Infinium 4GSa/s scope • 250k samples per edge • 66MHz clock measurement shown • RMS jitter determined by removing trigger jitter
Conclusions and Future Work • Demonstrated a self-referenced LC clock synthesizer with no external reference • Low jitter and scaling/start-up latency • Low overall drift, though drift under-compensated • Temperature compensation correction linear • Alternative compensation techniques already in Si • Very high total accuracy over PVT to be reported soon • Potentially an all-Si approach to stable and accurate clock synthesis • Never underestimate what can be done with CMOS alone