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SiGe HBT BiCMOS Technology Outline

The Technology Playing Field Integration of SiGe HBTs with CMOS Carbon Doping Passives Reliability and Yield Issues. SiGe HBT BiCMOS Technology Outline. IBM 第一個把 SiGe Technology 商品化 投入大量資源研發 已經有三個不同版本的 SiGe Tech. 用於產品上 , 且第四種也在醞釀. The Technology Playing Field. Cuteoff Freq. VS year.

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SiGe HBT BiCMOS Technology Outline

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  1. The Technology Playing Field Integration of SiGe HBTs with CMOS Carbon Doping Passives Reliability and Yield Issues SiGe HBT BiCMOS TechnologyOutline

  2. IBM第一個把SiGe Technology商品化 投入大量資源研發 已經有三個不同版本的SiGe Tech.用於產品上,且第四種也在醞釀 The Technology Playing Field Cuteoff Freq. VS year

  3. The Technology Playing Field 11 7.Spacer 9. 5 4 2.Collector epi 1.N+ subcollector 6 1.P- substrate 3

  4. The Technology Playing Field Cross section SEM of 2nd SiGe HBT

  5. The Technology Playing Field trapezoidal

  6. SiGe HBT比Ⅲ-ⅤHBT更適合整合入CMOS (BiCMOS) 也許BiCMOS比單獨使用HBT或是CMOS更適用於mixed-signal 在舊有的CMOS技術下SiGe Tech. 有數個優勢:tool,製程的相容性,良率,成本的節省,在舊有的CMOS技術下 Integration of SiGe HBTs with CMOS

  7. Integration of SiGe HBTs with CMOS For 1st SiGe HBT BiCMOS For 2nd &3rd BiCMOS

  8. Integration of SiGe HBTs with CMOS 3rd SiGe HBT

  9. Carbon Doping Doping過飽和的C

  10. Passives

  11. Reliability and Yield Issues

  12. Reliability and Yield Issues

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