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Tube 1: Wet/Dry Oxidation, H 2 torch Tube 2: Solid Source Diffusion (Boron), oxidation

THERMAL DEPOSITION -Tystar Tytan 4-Tube Furnace Stack. Tube 1: Wet/Dry Oxidation, H 2 torch Tube 2: Solid Source Diffusion (Boron), oxidation Tube 3: Si 3 N 4 and Low Stress SiN x LPCVD (DCS and NH3) Tube 4: Low Temp. Oxide (LTO) Polysilicon LPCVD. Stress and Index of Refraction vs

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Tube 1: Wet/Dry Oxidation, H 2 torch Tube 2: Solid Source Diffusion (Boron), oxidation

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  1. THERMAL DEPOSITION -Tystar Tytan 4-Tube Furnace Stack • Tube 1: Wet/Dry Oxidation, H2 torch • Tube 2: Solid Source Diffusion (Boron), oxidation • Tube 3: Si3N4 and Low Stress SiNx LPCVD (DCS and NH3) • Tube 4: Low Temp. Oxide (LTO) Polysilicon LPCVD

  2. Stress and Index of Refraction vs Dichlorosilane/Ammonia Flow Ratio • Stress is intrinsic - due to shrinkage during/after growth • Stress not a function of thickness • Main growth parameters are DCS/NH3 ratio, growth temperature and growth pressure Sekimoto et al., JVST 21(4) 1982 Gardeniers et al., JVSTa 14(5) 1996

  3. Low Stress Silicon Nitride • Recipe 100 sccm Dichlorosilane 17 sccm Ammonia 835 °C, 250 mT • Growth Rate 5.7 nm/min • Index of refraction, n ~ 2.23 - 2.3 • Residual Stress

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