2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wirel

1. 2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group Herbert S. Bennett Semiconductor Electronics Division, NIST Gaithersburg, MD On Behalf of the RF and AMS ITWG Members 18 July 2007

2. Wireless ITWG Scope • Use wireless ICs as technology driver • Roadmap technical requirements, challenges and potential solutions for RF and AMS IC technologies in wireless applications such as cellular phones, WLAN, WPAN, automotive radar, phased array systems and other emerging standards • Address intersection of silicon with III-V compound semiconductors • 2007 Roadmap added MtM focus

3. Wireless ITWG Methodology Communication System - Protocols/Standards - Frequencies 0.8 – 100GHz - Architecture Circuit Figures-of-Merit - Dynamic Range, Bandwidth - Gain, Noise Figure, Linearity - Phase Noise - Output Power, Gain, PAE - Power Consumption- Thermal Management • Device Figures-of-Merit • Mismatch, Gain • - fT & fMAX • - NFmin & 1/f noise • - Breakdown • - Quality factor, linearity • - Power density, PAE • - COST Wireless Roadmap Material systems : Si, SiGe, GaAS, InP, SiC, GaN Device structures : MOSFET, LDMOS, HBT, MESFET, PHEMT, MHEMT, passives, And More than Moore - Embedded passives and RFMEMs

4. GaN - HEMT InP – HBT, HEMT GaAs MEHMT GaAs - HBT, PHEMT SiGe – HBT, BiCMOS Si – RF CMOS SiC - MESFET Si-LDMOS 0.8 Hz 2 GHz 5 GHz 10 GHz 28 GHz 77 GHz 94 GHz GSM CDMA ISM PDC GPS SAT Radio DCS PCS DECT CDMA WLAN 802.11b/g HomeRF Bluetooth SAT TV WLAN 802.11a SAT TV WLAN Hyperlink UWB LMDS WLAN AUTO RADAR All Weather Landing; Imaging Wireless Communication Application Spectrum Roadmap mm-Wave Tables Applications drive Noise Figure, Power, Power Added Efficiency, Linearity and Cost

5. 2007 Wireless ITWG Organization Pascal Ancey ST Micro Joost. Van Beek NXP Herbert Bennett NIST Pascal Chevalier ST Micro Julio Costa RFMD Stefaan Decoutere IMEC Erwin Hijzen NXP Digh Hisamoto Hitachi Dave Howard Jazz W. Margaret Huang Freescale Anthony Immorlica BAE Systems Andre Jansman NXP Snezana Jenei Infineon Jay John Freescale Alvin Joseph IBM Takahiro Kamei Oki Dawn Wang IBM David Chow HRL Bobby Brar TSC Tom Kazior Raytheon Yukihiro Kiyota Sony Sebastian Liau ITRI Ginkou Ma ITRI Mel Miller Freescale Jan-Erik Mueller Infineon Hansu Oh Samsung Jack Pekarik IBM Marco Racanelli Jazz Bernard Sautreuil ST Micro Sam Shichijo TI Albert Wang IIT Chuck Weitzel Freescale Geoffrey Yeap Qualcomm Peter Zampardi Skyworks Bin Zhao Freescale Herbert Zirath Chalmers U 2007 New members

6. 2007 Organization Chair: Margaret Huang, Freescale 36 Members /last year 27 Co-chairs: Jan-Erik Mueller, Infineon 20 US, 10 Europe, 6 AP Bin Zhao, Freescale Editor: Herbert Bennett, NIST • Subgroup CMOS Jack Pekarik, IBM • Subgroup Bipolar Marco Racanelli, Jazz • Subgroup Passives Sam Shichijo, TI • Subgroup PA Peter Zampardi, Skyworks Chuck Weitzel, Freescale • Subgroup mm-Wave Tony Immorlica, BAE Systems • Subgroup MEMS Dave Howard, Jazz

7. 2007 Wireless Requirement Tables • CMOS • Performance Analog CMOS • Continue linkage to Low Standby Power (LSTP) CMOS roadmap with 1 year lag (Supply Voltage, Tox, Gate length ) • RF & AMS parameters including: Ft/Fmax. Noise Fig, Gm/Gds, 1/f noise and Vt matching • Precision Analog CMOS • Thick gate oxide CMOS • No update for 2007 • New 2007, CMOS requirements for mm-Wave • Link to High Performance CMOS roadmap with 2 year lag • Added RF parameters: Ft/Fmax. Noise Fig @ 24GHz & 60GHz

8. 2007 Wireless Requirement Tables • Bipolar • 3 Separate Bipolar devices: • High Voltage – “typical” low-cost bipolar device • High Speed – mm-Wave applications • PA – power amplifier applications • Focus on high speed and PA bipolar as drivers • 2007 reduce high speed device Ft scaling (delay 300 Ghz by 1 yr and 500 GHz by 5 yrs). Adjust Fmax, JC and BVCEO scaling accordingly. • Revised PA NPN parameters, aligned to PA battery voltage • Noise Figure @ 60 GHz • On-Chip Passives • 3 applications: Analog, RF and Power Amplifier • Devices include: Capacitors, Resistors, Inductors, Varactors • 2007 add MOM RF capacitor

9. 2007 Wireless Requirement Tables • Power Amplifier • Handset : HBT & FET, III-V and Si • 2007 add end-of-life battery voltage, FET/HBT integration for integrated bias circuit design, on-chip switch integration (for stage by-passing). • Emerging markets driving PA to a cost/performance driven and a cost only driven applications. Cost-only market driving silicon single chip alternatives. • Base Station: Cellular and emerging WiMAX • Required relatively high RF power, LDMOS & III-V FET • 2007 drop SiC device, , displaced by GaN device • mm-Wave • Dominated by III-V (GaAs PHEMT, InP HEMT, GaAs MHEMT, GaN HEMT, InP HBT ), plus SiGe HBT and RF CMOS (2007) • Low noise amplifier and power devices

10. MtM Focus of Wireless Multi-Standard Applications • Address multi-band, multi-mode, portable applications • Present device roadmap alone does not enable software defined radio (SDR); needs to: • Address digital radio design requirements • Address Hybrid approach with wideband amplified and matching, filtering and switching network • module assembly and embedded passives requirements (new table) • RFMEMS requirements (new table)

11. Embeded Passives Table • Consider 3 elements on various module substrates such as organic and low-temperature co-fired ceramic (LTCC): • Resistor • Capacitor • Inductor • Requirements for example in: • Tolerance • Temperature linearity • Resonance frequency • Sheet resistance • Breakdown voltage

12. RF MEMS Table • Focus on 4 elements: • BAW • Resonator • Switch capacitive contact • Switch metal contact • Requirements in: • Design tool • Packaging • Performance driver • Cost driver

13. Wireless Working Group Key Considerations • Traditional Roadmap Drivers: • Cost (scaling, die size, part count) • Power Consumption • Chip Functionality • Non-traditional Roadmap Drivers: • Government regulations determining system spectrum and specifications • Standards and protocols drive frequencies, power and performance • Color coding “Manufacturing solutions exist” does not imply product volume shipment per ITRS definition • RF module form factor (size and height requirements) • Cost / Performance Drives Integration: • Multi-band Multi-mode system applications (embedded passives, filter, switch integration) • Signal isolation and integrity • Analog Shrink (power supply, area, design innovations)

14. Challenges and Trends • Radio Integration: • Performance and cost trade off for SoC vs SiP solution • Signal isolation - challenge to technologists, designers, and EDA tool providers • CAD solution for Integrated Radio SiP design (chip, passive, MEMS, package, tool compatibility, model accuracies) • Device Technology: • Optimizing analog/RF CMOS devices with scaled technologies. Fundamental changes in CMOS device structure device may lead to the need of separate process/chip to support conventional precision analog/RF devices • Cost and performance tradeoff of integrating passive devices • Predictability of battery technology (end-of-life) and its impact on PA roadmap • Compound semiconductor substrate quality, reliability, thermal management • Design: • Design approach for wider range of supply voltages • Digitizing analog functions, Software Define Radio (SDR)

15. THANK YOU