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Experiments. P contact. ITO. 200nm P- GaN with 6 x10 17 cm -3 doping. EBL ： 20nm P- AlGaN. Five pairs. MQW ： InGaN / GaN with 16nm GaN barriers. N contact. 3 μ m N- GaN with 1 x10 19 cm -3 doping. Sapphire. chip size ： 300 um × 300um. Results and Discussion.
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Experiments P contact ITO 200nm P-GaN with 6x1017cm-3 doping EBL：20nm P-AlGaN Five pairs MQW：InGaN/GaN with 16nm GaN barriers N contact 3μm N-GaNwith 1x1019cm-3 doping Sapphire chip size：300 um× 300um 3
Results and Discussion Fig. 1.Schematic diagram of band engineering at MQWs with GQWs and conventional QWs. 4
Fig. 2. Experimental and simulation HR-XRD curves of (a) conventional LED and (b) GQW LED withindium composition grades from 30% to 0%. 5
