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Experiments

Experiments. P contact. ITO. 200nm P- GaN with 6 x10 17 cm -3 doping. EBL : 20nm P- AlGaN. Five pairs. MQW : InGaN / GaN with 16nm GaN barriers. N contact. 3 μ m N- GaN with 1 x10 19 cm -3 doping. Sapphire. chip size : 300 um × 300um. Results and Discussion.

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Experiments

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  1. Experiments P contact ITO 200nm P-GaN with 6x1017cm-3 doping EBL:20nm P-AlGaN Five pairs MQW:InGaN/GaN with 16nm GaN barriers N contact 3μm N-GaNwith 1x1019cm-3 doping Sapphire chip size:300 um× 300um 3

  2. Results and Discussion Fig. 1.Schematic diagram of band engineering at MQWs with GQWs and conventional QWs. 4

  3. Fig. 2. Experimental and simulation HR-XRD curves of (a) conventional LED and (b) GQW LED withindium composition grades from 30% to 0%. 5

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