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RIAPA. A Model for Electric Characteristics of P3HT:PCBM Bulk Heterojunction Solar Cells. Khadije Khalili 1 , Hossein Movla 2 , Hamed Azari Najafabadi 1 1 Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran
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RIAPA A Model for Electric Characteristics of P3HT:PCBM Bulk Heterojunction Solar Cells Khadije Khalili1, Hossein Movla2, HamedAzari Najafabadi1 1 Research Institute for Applied Physics and Astronomy (RIAPA), University of Tabriz, Tabriz, Iran 2 Department of Solid State Physics, Faculty of Physics, University of Tabriz, Tabriz, Iran
Contents ☼A short history of solar cells ☼Polymer Solar Cell ☺Principle and device configuration ☼Organic Solar Cell Materials ☼ The objectives of our work ☺ Electric characteristics ☺ Results ☼ References NSSC90
A short history of solar cells Medium efficiency , but expensive • First Generation • - Single crystal silicon wafers (c-Si) • Second Generation • - Amorphous silicon (a-Si) • - Polycrystalline silicon (poly-Si) • - Cadmium telluride (CdTe) • - Copper indium gallium diselenide (CIGS) alloy • Third Generation • - Nanocrystal solar cells • - Photoelectrochemical (PEC) cells • • Gräetzel cells • - Polymer solar cells • - Dye sensitized solar cell (DSSC) • Fourth Generation • - Hybrid - inorganic crystals within a polymer matrix Cheap , but low efficiencies NSSC90
Polymer Solar Cell Principle and device configuration: • Absorption of light • Exciton dissociation • Double-layer device • Bulk-heterojunction (BHJ) • Charge transportation Li Gui, LU GuangHao, et al. Progress in polymer solar cell, Chinese Science Bulletin (2007) NSSC90
Organic Solar Cell Materials Most important Semiconducting polymers as 1- electron donor polymers: (MEH-PPV), (MDMOPPV), poly(3-hexeylthiophene) (P3HT), (PFO- DBT), (PCDTBT), regioregular poly(3-hexeylthiophene) (RR- P3HT) 2- hole acceptor materials: fullerene (C60) 6,6-phenyl C61 -butyric acid methyl ester (PC61BM), 6,6-phenyl C71-butyric acid methyl ester (PC71BM) and photovoltaic devices are fabricated on cleaned glass substrates with a patterned ITO layer. Other common materials are consist of the conducting polymer poly-wethylenedioxy thiophenex:poly-wstyrene sulfonatex(PEDOT:PSS), the active layer (P3HT:PCBM), and aluminum electrodes are thermally evaporated. NSSC90
The objectives of our work are: • We choose a polymer solar cell with P3HT:PCBM composite as photoactive layer. • Considering Shottky contacts, barrier lowering due to the image potential, Langevin recombination, and field dependent mobility, we adopt the time-independent one-dimensional drift-diffusion model. • Using the boundary conditions at x=0 and x=d and this fact that , we solve Poisson’s equation and find expressions of current density equation, charge carrier distribution, and J-V characteristics. • By using calculated equations, we plot charge carrier density and the terminal current versus cell thickness with different applied voltage, from equilibrium to built-in voltage. • Finally, we compare our calculations for two thickness 100 and 200nm. A. B. Walker, S. J. Martin, A. Kambili, J.Phys.: Condense. Matter 14, 9825(2002) NSSC90
Electric characteristics: NSSC90
Results NSSC90
Fig 1. Variation in the band edge of the semiconductor in terms of the active region distance in thermal equilibrium for different donor like (n-type) dopings. 100 nm 200 nm NSSC90
Fig 2. Variation of electron mobility versus cell voltage. NSSC90
Fig 3. The injected electron profile in a semiconductor with cathode on the right hand side and anode on the left hand side. In the case of V=0 is thermal equilibrium. 100 nm 200 nm NSSC90
Fig 4. Diffusion and drift currents at 300 K in the double Schottky barrier device at 0.5 V. Diffusion current is larger than the drift current and the two currents flow in the opposite directions. 100 nm 200 nm NSSC90
Fig 5. Calculated l J-V characteristics of an ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell in dark and under different illumination intensities. 100 nm 40 mw/cm2 60 mw/cm2 80 mw/cm2 40 mw/cm2 60 mw/cm2 80 mw/cm2 200 nm NSSC90
Fig 7. Calculated J-V characteristics of an ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell in dark and under different illumination intensities. The dashed blue line is the Lampert et.al. calculated dark current. 40 mw/cm2 60 mw/cm2 80 mw/cm2 NSSC90
Fig 8. Calculated J-V characteristics of an ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell for different thickness. NSSC90
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