1 / 23

New Product Introduction: 4Kb-128Kb Serial F-RAM™ Family

Cypress introduces the industry's fastest and most energy-efficient nonvolatile RAM products with its 4Kb-128Kb Serial F-RAM Family, ideal for the growing NVRAM market.

nmcmeans
Download Presentation

New Product Introduction: 4Kb-128Kb Serial F-RAM™ Family

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. New Product Introduction:4Kb-128Kb Serial F-RAM™ Family Cypress Introduces the Industry’s Fastest, Most Energy-Efficient, Low-Density Nonvolatile RAM Products 4Kb-128Kb Serial F-RAM Family New Product Introduction Title

  2. F-RAM Is the Ideal Solution for the Large and Rapidly Growing NVRAM Market • The Global TAM1 forecast for Nonvolatile Random Access Memory (NVRAM) is $1.1B in 20142 with a 8% CAGR through 2019 • Cypress F-RAM serves many high-growth NVRAM markets, including: • Smart Meters • Automotive Electronics • Industrial Controls • Multifunction Printers • Wearable Electronics • The mission-critical systems used in these high-growth markets require high-speed, high-endurance and high-reliability data capture on power loss • Customers prefer simple, energy-efficient system designs • Alternative Nonvolatile Memory solutions such as EEPROM cannot meet these requirements • Mission-critical systems require NVRAMs with best-in-class write speed, endurance, reliability and energy efficiency • 1 Total Available Market • 2 Web-Feet Research, Semicast and Gartner Serial F-RAM 4Kb-128Kb Serial F-RAM Family New Product Introduction Market Vision

  3. Cypress Is the NVRAM Market Leader • Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory products • F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs • nvSRAM, the industry’s fastest parallel NVRAMs • Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products • F-RAM consumes 200x less write energy than the most advanced EEPROM and offers 100 million times the Write Endurance1 • Densities range from 4Kb to 4Mb, and voltages range from 2.0 V to 5.5 V • SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages • Real-time clocks and counters are also available on F-RAM products • Cypress offers a wide range of the industry’s fastest parallel nvSRAM products • Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance • Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages • Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options • Integrated real-time clocks are also available on nvSRAM products • Cypress: • Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience • Continues to invest heavily in new products • Is committed to providing products that meet the most rigorous automotive and military standards • Assures long-term supply of F-RAM and nvSRAM products • Has shipped more than 1 billion NVRAM units • Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data • 1 The number of times an NVM cell can be re-written before it wears out 4Kb-128Kb Serial F-RAM Family New Product Introduction Market Positioning

  4. Serial Nonvolatile Memory Terms • Nonvolatile Memory (NVM) • Memory that retains its information on power loss • Nonvolatile Random Access Memory (NVRAM) • NVM that allows direct access to stored data in any random order • Ferroelectric Random Access Memory (F-RAM) • A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data • Electrically Erasable Programmable Read-Only Memory (EEPROM) • A common NVM that uses floating-gate technology to store data • Page Write • A write to a fixed-length contiguous block of memory • Soak Time • The approximate 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers • Write Endurance • The number of times an NVM cell can be rewritten before it wears out • Wear Leveling • A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached • AEC-Q100 • A quality standard defined by the Automotive Electronics Council used to verify the reliability of ICs and qualify them • for automotive applications 4Kb-128Kb Serial F-RAM Family New Product Introduction Terms of Art

  5. Serial NVM Design Problems • 1. Many electronic devices must reliably store system data in NVM on power loss • EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time • Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability • Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields • 2. Many data-logging applications exceed the 1-million write-cycle limitation of EEPROM • Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan • Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost • 3. Systems using EEPROM consume excess power • For the 5 ms required for EEPROM Soak Time per Page Write • For the processing required to do Wear Leveling • Cypress 4Kb-128Kb serial F-RAMs solve these problems • EliminateSoak Time and the need for additional capacitors or batteries to complete a Page Write on power loss • Provide100 trillion write cycles,eliminating the need for Wear Leveling • Consume 200x less write energy than EEPROM • Protect data with radiation-tolerant and magnetic field-tolerant F-RAM memory cells • The Cypress 4Kb-128Kb serial F-RAMs offer 100 million times the endurance of EEPROM and consume 200x less write energy 4Kb-128Kb Serial F-RAM Family New Product Introduction Design Problems

  6. Serial F-RAM Is a Better Solution Simplify a conventional, complex, EEPROM-based design… By choosing F-RAM as your serial Nonvolatile Memory solution… To produce better solutions for multiple mission-critical applications at a lower cost. 2 x 256Kb for a 64Kb System 8x EEPROM capacity for Wear Leveling Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics File System Controller Memory Worn Cell Wear Leveling software algorithm to increase EEPROM Write Endurance F-RAM pin-for-pin replacement for EEPROM SOIC8 Additional capacitor to maintain power for 5 ms per Page Write for Soak Time 4Kb-128Kb Serial F-RAM Family New Product Introduction Cypress Solution

  7. Cypress 64Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 2 or more EEPROMs are required to replace an F-RAM solution; therefore, the effective standby current will be higher. For example, 4 EEPROMs will result in 1.2-µA standby current 4Kb-128Kb Serial F-RAM Family New Product Introduction Competitive Comparison

  8. $1.81 $0.39 $0.39 $0.10 $0.10 $2.30 64Kb F-RAM Solution Value CompetitorEEPROM: (2x) Atmel AT25256B-SSHL-T 256Kb Price: $1.811BOM Integration5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.392Additional ValueWear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 30% Total Savings: CY15B064Q-SXI $1.603 $0.70 1 Mouser website 1ku pricing on 10/31/20142 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com 4Kb-128Kb Serial F-RAM Family New Product Introduction Pricing

  9. 128Kb/64Kb/16Kb/4Kb SPI Serial F-RAM Applications Block Diagram Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics 128Kb/64Kb/16Kb/4Kb SPI Serial F-RAM Control Logic 4 Control F-RAM Array Instruction Register Features Up to 50-MHz Serial Peripheral Interface (SPI) One-hundred-trillion read/write cycle endurance Direct hardware replacement for serial EEPROM Operating voltage ranges: 1.71-1.9 V, 1.8-5.5 V One-hundred-year data retention Industrial temperature operation: -40°C to +85°C Automotive A temperature operation: -40°C to +85°C Automotive E temperature operation: -40°C to +125°C Packages: 8-pin TDFN, 8-pin SOIC, 8-ball CSP Address Register Serial Input Serial Output Data I/O Register Status Register Availability Collateral Sampling: Q1 2016 Production: Q2 2016 Preliminary Datasheet: Contact Sales 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Overview

  10. Here’s How to Get Started • Download the SPI Guide for F-RAM • Register to access online technical support: www.cypress.com • Request a preliminary datasheet: Contact Sales Infotainment System by Hyundai Automotive Safety System by Hyundai Motor Control by SEW Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh Digital Hearing Aidsby Oticon 4Kb-128Kb Serial F-RAM Family New Product Introduction Getting Started

  11. References and Links • Cypress Nonvolatile Products website: www.cypress.com/nonvolatile • The source for all of our publicly available nonvolatile product documentation and collateral • Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap • For datasheets and NDA roadmap requests, contact your Cypress Sales Representative or email cypressfram@cypress.com • App Notes: Nonvolatile Products Application Notes • Knowledge Base: Nonvolatile Products Knowledge Base Articles • Print This Presentation: 4Kb-128Kb Serial F-RAM Family New Product Introduction 4Kb-128Kb Serial F-RAM Family New Product Introduction References and Links

  12. APPENDIX 4Kb-128Kb Serial F-RAM Family New Product Introduction Appendix

  13. F-RAM PortfolioLow Power | High Endurance CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind2 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E1 NEW NEW FM25V20A 2Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM25H20/V20 2Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind2 FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind2 512Kb-8Mb FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind2 FM25V02/W256 256Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V02/W256 256Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2, Auto A3 FM33256 256Kb; 3.3V; 16 MHz SPIInd2; RTC4; Power Fail Watchdog; Counter FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind2 Wireless Memory NDA Required Contact Sales FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 CY15V128Q/B128Q 128Kb; 1.71-1.9 V 50 MHz SPI; Ind2, Auto A3 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2, Auto A3 CY15V128J/B128J 128Kb; 1.71-1.9 V 3.4 MHz I2C; Ind2, Auto A3 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHzI2C;Ind2;RTC4;Power Fail; Watchdog; Counter FM18W08 256Kb; 2.7-5.50 V 70 ns; x8; Ind2 CY15V064Q/B064Q 64Kb; 1.71-1.9 V 50 MHz SPI; Ind2, Auto E1 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind2, Auto E1 CY15V064J/B064J 64Kb; 1.71-1.9 V 3.4 MHz I2C; Ind2, Auto E1 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHzI2C;Ind2;RTC4;Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind2 4Kb-256Kb FM16W08 64Kb; 2.7-5.50 V 70 ns; x8; Ind2 CY15V016Q/B016Q 16Kb; 1.71-1.9 V 50 MHz SPI; Ind2, Auto E1 FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 CY15V016J/B016J 16Kb; 1.71-1.9 V 3.4 MHz I2C; Ind2, Auto E1 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 CY15V004Q/B004Q 4Kb; 1.71-1.9 V 50 MHz SPI; Ind2, Auto E1 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 CY15V004J/B004J 4Kb; 1.71-1.9 V 3.4 MHz I2C; Ind2, Auto E1 Production Sampling Development Concept Status 4 Real-time clock 1 AEC-Q100 −40ºC to +125ºC 2 Industrial grade −40ºC to +85ºC 3 AEC-Q100 −40ºC to +85ºC Availability QQYY QQYY 4Kb-128Kb Serial F-RAM Family New Product Introduction Roadmap

  14. Product Family Overview 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Overview

  15. 128Kb/64Kb/16Kb/4Kb I2C Serial F-RAM Applications Block Diagram Smart Meters Automotive Electronics Industrial Controls Multifunction Printers Wearable Electronics 128Kb/64Kb/16Kb/4Kb I2C Serial F-RAM Counter F-RAM Array Address Latch Features Up to 3.4-MHz I2C One-hundred-trillion read/write cycle endurance Direct hardware replacement for serial EEPROM Operating voltage ranges: 1.71-1.9 V, 1.8-5.5 V One-hundred-year data retention Industrial temperature operation: -40°C to +85°C Automotive A temperature operation: -40°C to +85°C Automotive E temperature operation: -40°C to +125°C Package: 8-pin SOIC, 8-ball CSP Serial Data/Address Serial to Parallel Converter Data Latch 5 Control Logic Device ID and Serial Number Control Availability Collateral Sampling: Q1 2016 Production: Q2 2016 Preliminary Datasheet: Contact Sales 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Overview

  16. 128Kb/64Kb/16Kb/4Kb I2C F-RAM Product Selector Guide I2C F-RAM Part Numbering Decoder CY15XXXXJ – XXXI Temperature Range: I = Industrial Pb Content: X = Pb-free Package: S = 8-SOIC, FD = 8-CSP Interface: J = I2C Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Voltage: V = 1.71 to 1.90 V, B = 1.80 to 5.50 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Selector Guide

  17. 128Kb/64Kb/16Kb/4Kb SPI F-RAM Product Selector Guide SPI F-RAM Part Numbering Decoder CY15XXXXQ – XXXI Temperature Range: I = Industrial Pb Content: X = Pb-free Package: S = 8-SOIC, LH = 8-DFN, FD = 8-CSP Interface: Q = SPI Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Voltage: V = 1.71 to 1.90 V, B = 1.80 to 5.50 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Selector Guide

  18. Automotive F-RAM Product Selector Guide Automotive Serial F-RAM Part Numbering Decoder CY15BXXXX – SXX Temperature Range: A = Automotive-A, E = Automotive-E Pb Content: X = Pb-free Package: S = 8-SOIC Interface: Q = SPI, J = I2C Density: 004 = 4Kb, 016 = 16Kb, 064 = 64Kb, 128 = 128Kb Voltage: B = 1.80 to 5.50 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 4Kb-128Kb Serial F-RAM Family New Product Introduction Product Selector Guide

  19. Cypress 128Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 Two or more EEPROMs are required to replace an F-RAM solution, hence effective standby current will be higher. For example, 4 EEPROMs will result in 2-µA standby current 4Kb-128Kb Serial F-RAM Family New Product Introduction Competitive Comparison

  20. Cypress 16Kb/4Kb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, 20 MHz, 2.7 to 3.6 V, -40°C to +85°C 3 Conditions: Max current, 1 MHz, 2.7 to 3.6 V, -40°C to +85°C 4 2 or more EEPROMs are required to replace an F-RAM solution; therefore, the effective standby current will be higher. For example, 4 EEPROMs will result in 0.8-µA standby current 4Kb-128Kb Serial F-RAM Family New Product Introduction Competitive Comparison

  21. $2.82 $0.39 $0.39 $0.10 $0.10 $3.31 128Kb F-RAM Solution Value Competitor EEPROM: (2x) Atmel AT25512N 512Kb Price: $2.821 BOM Integration 5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.391 Additional Value Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 17% Total Savings: CY15B128Q-SXI $2.752 $0.56 1 Digikey website 1ku pricing on 10/31/2014 2 Estimated web pricing on www.cypress.com 4Kb-128Kb Serial F-RAM Family New Product Introduction Pricing

  22. $1.00 $0.39 $0.39 $0.10 $0.10 $1.49 16Kb F-RAM Solution Value CompetitorEEPROM: (2x) Atmel AT25640B-SSHL-T 64Kb Price: $1.001BOM Integration5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.392Additional ValueWear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 40% Total Savings: CY15B016Q-SXI $0.903 $0.59 1 Mouser website 1ku pricing on 10/31/20142 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com 4Kb-128Kb Serial F-RAM Family New Product Introduction Pricing

  23. $0.70 $0.39 $0.39 $0.10 $0.10 $1.19 4Kb F-RAM Solution Value CompetitorEEPROM: (2x) Atmel AT25160B-SSHL-T 16Kb Price: $0.701BOM Integration5-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor Price: $0.392Additional ValueWear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 500,000 units Value Added: $0.10 Competitor Capacitor for 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling Firmware Development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 34% Total Savings: CY15B004Q-SXI $0.793 $0.40 1 Mouser website 1ku pricing on 10/31/20142 Digikey website 1ku pricing on 10/31/2014 3 Estimated web pricing on www.cypress.com 4Kb-128Kb Serial F-RAM Family New Product Introduction Pricing

More Related