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Organization of Nanowire Arrays for Integrated Nanosystems Presenter: Octavian Florescu

Organization of Nanowire Arrays for Integrated Nanosystems Presenter: Octavian Florescu Authors: Lieber group Department of Chemistry and Chemical Biology, Harvard University. Organization of nanowires Why is it important? Criteria for organization Methodology Results Conclusions.

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Organization of Nanowire Arrays for Integrated Nanosystems Presenter: Octavian Florescu

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  1. Organization of Nanowire Arrays for Integrated Nanosystems Presenter: Octavian Florescu Authors: Lieber group Department of Chemistry and Chemical Biology, Harvard University

  2. Organization of nanowires Why is it important? Criteria for organization Methodology Results Conclusions Outline

  3. Why? Critical to the realization of integrated electronics, photonics and sensors Criteria for organization Controllability Yield Reproducibility Reliability Cost Organizing Nanowires

  4. p or n-SiNW with good diameter distribution were grown by VLS Controlled Growth of Nanowires • Substrate was oxidized silicon • Catalyst was Au nanoparticls • Reactant was silane Cui et al., APPL. PHYS. LETT VOL. 78, NO 15

  5. a) SiNW are suspended using a surfactant in nonpolar solvent. Compressed in a Langmuir-Blodgett trough. Compression determines center to center spacing. b) SiNW transferred onto Si substrate. Deposition of Nanowire Arrays on Substrate Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 1255-1259

  6. 200nm to 2um pitch realizable Decent control of the periodicity and wire width Can cover over 20cm2 in area. Deposition Results Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 1255-1259

  7. In this scenario SiNW are coated with a sacrificial layer and are compressed until they touch. Can be used as a mask for deposition of metal NW. Finer Deposition … Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 951-954

  8. 90nm pitch was produced with 40nm linewidth Control of both pitch and linewidth In this case pitch independent of LB compression Finer Deposition Results Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 951-954

  9. a) Electrodes with same pitch as SiNW align well with the nanowires b) PL used to pattern active areas containing SiNW Electrodes deposited over SiNW active areas Integration with Electronics Jin et al., NANO LETTERS, 2004, Vol. 4, No. 5 915-919

  10. Realization • 80% of the 3000 electrodes are bridged by SiNWs • Can be combined with NIL, EUV to generate very dense arrays of electrodes Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 951-954

  11. gm = 1250nA/V Ion/Ioff = 107 Ssubthreshold = 160mV/decade μ = 307cm2/V*s Electrical Performance Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 951-954

  12. Size of FET depends on the spacing between SiNWs, which depends on the LB compression. Decent control of VTH Another Realization Whang et al., NANO LETTERS 2003, Vol. 3, No. 9, 951-954

  13. Good 80% device yield Inexpensive Reproducible (?) Bad Low gain Unknown Controllability of device characteristics Reliability Not suitable yet for ICs but can be interesting for use in thin film electronics and as transducers. Conclusions

  14. Thank you!

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