Analytical Network for Nanotech

1. Analytical Network forNanotech R. Balboni IMM, May 8, 2009

2. ANNA – Analytical Network for NAnotech • Overview • Networking • Transnational Access • Joint Research

3. ANNA – Analytical Network for Nanotech

4. ANNA – Overview • Duration: 2007 to 2010 • 12 partners from 7 European member states • Funded by the European Commission within Framework • Programme 6 - Research Infrastructures – Integrated Infrastructure Initiative (I3) • Budget: 7.5 M EUR; Funding: 5.65 M EUR (75%) • Objectives • To integrate and enhance European analytical resources • To create centre of excellence for analysis of nanotechnologies and a multi – site laboratory • Long term vision: integrated distributed laboratory

5. ANNA – Overview: Analysis / Metrology / Characterisation • X-Ray technologies: • TXRF, TXRF - NEXAFS, GIXRF, XRR, XRD • e-beam technologies: • TEM, HRTEM, STEM • Ion beam technologies: • SIMS, ToF-SIMS, MEIS • Surface characterization: • XPS, AES, UPS, LEISS, EELS • Chemical analysis: • AAS, GCMS, Sample Preparation • Electrical characterisation: • C-V, C-T, I-t, C-G, SPV, ELYMAT, DLTS • Optical metrology: • spectroscopic ellipsometry, defect inspection, FTIR • Samples: • test structures, wafers, contamination and calibration standards

6. ANNA – Management and Networking Activities • NA1: Management of the Consortium • NA2: Establishment of analytical reference laboratories • status evaluation • ’golden labs’ (8 Partners with specialized expertise) • accreditation (e.g. ISO 17025 – laboratories) • NA3: Formation of European joint analytical laboratory • integration • web interface (www.anna-i3.org) • user manual (for joint laboratory and transnational access) • NA4: Standardization of samples and methodologies • standardization • matching • references

7. ANNA – Transnational Access • More than 1000 days of European Community funded Transnational Access to 18 infrastructure (laboratories, clean room, metrology) at 8 locations • Access to ANNA instrumentation and analytical services is either in person ("hands-on") or remotely by suitable (electronic) communications • Potential users of the infrastructure are researchers or groups of researchers from small & medium enterprises, large scale industry, research centres, or universities • Interested users apply for research Access by submitting a short project proposal • Selection of user proposals is by "peer review" on the basis of the scientific/technical merit (innovation, scientific and technological relevance). Priority will be given to first-time users and to users in countries without a similar infrastructure • Access is available from 2008 to 2010 • Note: Transnational Access means that users groups from the same country where the operator of the infrastructure is established are not eligible for access.

8. ANNA – Transnational Access

9. ANNA – Joint Research • Enhancement and development of methodologies • Improvement of ANNA services

10. Mid-Term (year 2) review • NA • Positive comments about coordination and management 'highly effective'. Advisory board very reactive and involved • Project communication has been very well organized • Accreditation in delay, but understandable. • TA • Open up to 25% to different fields than microelectronics • Preference to projects that ask to use a multitechnique approach • JRA • Very impressive the cross checking: good and important work • True joint research activity, successful and flexible as demanded • In line with expectations and also publications ok. Very positive overall evaluation of the Consortium

11. IMM – Bologna in ANNA • Budget • 899,510 € eligible, 508,555 € financed (57 %) • Impegno • 71 m/m • TEM (CBED, HREM, HAADF STEM) and X-rays structural characterisation (lab and synchrotron)

12. IMM in ANNA • Networking • NA2-Accreditation of the Electron Microscopy Lab • Requested for • Strain measurement in silicon by CBED • Dopant concentration measurement by TS-STEM • ISO 17025 accreditation is a project specific request in view of the establishment of the Golden Lab • Management Manual and Technical • definition of the Lab Responsibles • To be completed by end of 2009 • NA3-Formation of the Joint Lab • User manual

13. IMM in ANNA • Transnational Access • TEM analysis by STEM-HAADF, CBED e HREM) • Activity started in 2008 • 2 accesses up to now • 2 people, University of Cork and INTEL Ireland “Strain analysis on Ge nanowires” • 1 people, University of German Federal Armed Forces, “HREM of oxides on Si” • Sono pervenute altre 4 richieste nei successivi calls (su un totale di 57 per ANNA), 2 sono già state selezionate per l’accesso.

14. ANNA - JRA3: Tilted Sample Annular Dark Field Scanning Transmission Electron Microscopy (TSADF-STEM) • The aim is to define methodologies able to give a more complete characterization of ultra shallow dopant distributions Messa a punto di una tecnica ADF-STEM quantitativa per la determinazione dei profili di drogaggio in giunzioni ultra-sottili in Si. Modifica originale di una precedente tecnica dovuta a Pennycook et al. (1999). E’ stato necessario comprendere i meccanismi di contrasto operanti in ogni condizione sperimentale. Questo ha permesso di definire una procedura per filtrare/selezionare il segnale voluto. Nel caso dell’As in Si è stato possibile determinare la distribuzione del drogante alla superficie del campione dove falliscono tecniche spettroscopiche come il SIMS. La sensibilità della tecnica nel caso dell’As è ~ 1% mentre la precisione della procedura quantitativa è dell’ordine del 10%.

15. Quantitative determination in 5 keV 2x1015 As/cm2 implanted Si On-axis ADF-STEM TSADF-STEM as-implanted 800 °C for 3 min A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg, Appl. Phys. Lett.,92, 261907 (2008).

16. ANNA - JRA3: communications and publications • A. Armigliato, R. Balboni and A. Parisini ECS Transactions, 10, 57-64, 2007. • A. Parisini, D. Giubertoni, M. Bersani, V. Morandi, P. G. Merli, and J. A. van den Berg MRS Symposia Proceedings No 1026E (Matreials Research Society, Pittsburgh, 2007), 1026-C09-04. • A. Parisini, D. Giubertoni, M. Bersani, M. Ferri, V. Morandi and P. G. Merli Proceedings of the 8th Multinational Congress on Microscopy, Prague, 18-21 june 2007, p. 43. • A. Parisini, V. Morandi and S. A. Mezzotero Proceedings of the 14th European Microscopy Congress, Eds. M. Luysberg, et al., 1-5 September 2008, Aachen, Germany, vol.1, p. 145. • A. Parisini, V. Morandi, S. Solmi, P. G. Merli, D. Giubertoni, M. Bersani and J. A. van den Berg Appl. Phys. Lett.,92, 261907 (2008). • A. Parisini, V. Morandi, J. A. van den Berg, M. A. Reading, D. Giubertoni, P. Bailey, T. Noakes submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009. • A. Parisini, V. Morandi and S. A. Mezzotero Microscopy and Analysis, in press (2009).

17. 1.4 ± 0.5 nm 2.1 ± 0.5 nm Glue HfSiOx SiOx 1.1 ± 0.5 nm 1.1 ± 0.5 nm Fig. 6. Example of thickness measurement in a (011) cross-sectional HREM micrograph obtained on an HfSiOx/SiO2/Si high-k structure (sample D07). ANNA - JRA4. • The development of methods for the chemical, structural, optical and electrical characterization of 1-10 nm thick (oxy)nitrides and high-k materials films. Misura dello spessore: confronto tra i risultati ottenuti con HREM, MEIS, XPS, SE: a) emerge immediatamente il problema della scala su cui sono fatte le misure e della conseguente necessità di una misura dell’uniformità degli spessori; b) l’evidente rugosità dei films induce inoltre a considerare più attentamente la misura dello spessore.

18. ANNA - JRA4. Un primo approccio alla misura HREMdello spessore su film rugosi: Osservazione: differenti trattamenti portano a differenti valori di Ls. Definizione di misura locale: profilo d’intensità mediato su regioni d’estensione pari a Ls Gli spessori dei vari film sono definiti tramite i punti di flesso del profilo mediato Diverse misure locali sono effettuate su diverse immagini e i risultati sono espressi come:

19. ANNA - JRA4 Communications and publications Il confronto delle misure ottenute con le diverse tecniche è attualmente in corso. Nel prossimo futuro: confronto tra spessore strutturale (HREM) e composizionale (HR ADF-STEM o TSADF-STEM) sulla stessa area. • M. Fried, P. Petrik, J.A. van den Berg, M.A. Reading and A. Parisini • submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009. • J.A. van den Berg, M A Reading, A Parisini, M. Kolbe, B. Beckhoff, S. Ladas, P. Petrik, P.Bailey, • T. Noakes , T. Conard and S. De Gendt • submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009. • M. Reading, J. A. van den Berg, P. Bailey, T. Noakes, P. Zalm, A. Parisini, T. Conard and • S. De Gendt • submitted to J. Vac. Sci. Technol. B (2009)

20. Z Y X JRA5 • This activity aims at setting up a method to measure the mechanical stress in present and future generation devices by TEM-CBED. • The results of this technique will be validated by comparison with electrical measurements of stress-sensitive devices and with the results of numerical calculations. The procedure for TEM-CBED sample preparation by FIB was found NOT to be a trivial issue.

21. JRA5 - IMM • A reliable sample preparation procedure was defined, using a low energy final finishing (5 KeV) during FIB milling. • CBED measurements were validated by comparison with strain data obtained from process simulations and by measurements of samples with a known strain trend. • The impact of mechanical strain on the electrical properties of devices was shown both in terms of mobility modifications and in terms of defect generation • The possibility to measure the mechanical strain induced by layers doped with different impurities was demonstrated • Pubblicazioni • A. Armigliato, R. Balboni and A. Parisini, ECS Transactions, 10, 57-64, 2007. • R.Balboni, G. Borionetti, L. Moiraghi, G.Vaccari, M.L. Polignano, G. P. Carnevale, F. Cazzaniga, I. Mica, F. Sammiceli, submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009.

22. JRA6

23. ▪ nc-Si embedded in amorphous matrice JRA6 – X-ray analysis results Deposition of Silicon Rich Oxide (SRO) by Plasma Enhanced Chemical Vapor Deposition (PECVD) process on silicon blank wafers, followed by thermal annealing. • Pubblicazioni • P. Petrika, S. Militab, G. Puckerc, A. G. Nassiopouloud, J. A. van den Berge, M. A. Readinge, M. Frieda, and T. Lohnera, M. Theodoropouloud, S. Gardelisd, M. Barozzic, M. Ghulinyanc, A. Luic, L. Vanzettic, A. Picciottoc, submitted to ALTECH 2009, 216th ECS Meeting, Vienna, October 4-9, 2009. OP-GID patterns The nano-crystals dimensions estimated from XRD measurements (~4 nm) are in substantial agreement with the the sizes determined by PL measurements. ▪ nc-Si from SUPERLATTICES (SiO2/SRO): A series of samples (PECVD) annealed at different temperatures (from 600°C to 1150 °C). • The surface and interfaces evolution have been followed by XRR; • -The occurrence of nano-crystals have been determined at 1000°C.

24. ANNA - Conclusioni e prospettive • Commenti • È una delle principali fonti di finanziamento del reparto Strutturistica • Nella sua pur complessa struttura, offre sufficiente spazio all’attività di ricerca • ANNA e l’attività di Transnational Access offre opportunità di contatti con altri gruppi in Europa • Accreditamento • Difficile adattare la nostra realtà ed i criteri previsti da ISO17025 • CE verso l’accreditamento • Italia ed Europa • Prospettive ? • In FP7 gli i3 hanno mantenuto i finanziamenti precedenti • Proposta di un progetto per i Golden Labs ?