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Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured Surface

The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2006. Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured Surface. Tae-Young Kim * , *** , Bialuch Ingmar **, Klaus Bewilogua **, Kyu Hwan Oh ***and Kwang-Ryeol Lee *

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Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured Surface

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  1. The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2006 Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured Surface Tae-Young Kim*,*** , Bialuch Ingmar **, Klaus Bewilogua **, Kyu Hwan Oh ***and Kwang-Ryeol Lee * * Future Technology Research Division, KIST, KOREA ** New Tribological Coating, Fraunhofer IST, GERMANY ***School of Material Science and Engineering, SNU, KOREA

  2. Lotus Leaf Surface • Property of lotus leaf • Water droplet is not spread (static wetting angle reached 150o) • Water droplet removed by slight tilting of surface (wetting angle hysteresis is very low)

  3. Applications of Super-hydrophobic Surface Applications related with water droplet moving • Water repellent surface • Self cleaning of surface • Low resistance coating against liquid flow

  4. Microstructure of Lotus Leaf 20μm Planta, 202,(1998) 1 • Surface Material - cuticular wax • Surface morphology – very rough in micrometer scale

  5. Previous Works Langmuir 2004; 20(2); 10015 Langmuir 2004; 20(2); 287-290 Langmuir 2006; 22; 2433

  6. Dual Roughness Effect? 20μm Planta, 202,(1998) 1

  7. Motivation of This Work • Does dual roughness surface structure (DRS) affect super- hydrophobic property? • How much does DRS contribute the hydrophobic property?

  8. Experimental Surface structure control :Plasma Si etching technique Nano-meter size metal mask formation Surface chemical control : hydrophobic a-C:H:Si:O film deposition Super-hydrophobic surface Analysis

  9. Plasma Si Etching Plasma source gas : CF4 Plasma source gas : CF4+O2 • RF-PECVD • Source gas : Pure CF4 gas and CF4+O2 mixing gas • Chamber Pressure : 2 and 5 Pa • RF power : 150 and 300 W • RF bias : 300V • Etching time : 10min CF4 plasma gas CF4+O2 plasma gas Si wafer Si wafer

  10. Plasma Si Etching Plasma source gas : CF4 Nano post formation Plasma source gas : CF4+O2 Flat etched surface 400nm 400nm

  11. Surface Structure Manipulation Flat Si wafer Small Post Si wafer

  12. Nano Size Metal Dot Formation Cu sputtering on Si surface Si wafer Metal film separation by by heat treatment

  13. Surface Structure Manipulation Flat Si wafer Si wafer Small Post Si wafer Si wafer

  14. Surface Structure Manipulation Si wafer Big Post Flat Si wafer Dual Rough Small Post Si wafer Si wafer

  15. Microstructures Flat Big Post 500nm 500nm Dual Rough Small Post 250nm 500nm

  16. Static Wetting Angle 103.8o Big Post 93.2o Flat Dual Rough Small Post 134.0o 159.6o • Water drop volume : 5μL • Gently drop on the surface

  17. Static Wetting Angle

  18. Dynamic Wetting Angle • Wetting angle hysteresis

  19. Dynamic Wetting Angle

  20. Dynamic Wetting Angle Big Post Flat Dual Rough Small Post

  21. Dynamic Wetting Angle

  22. Dual Rough Structure Effect

  23. Conclusions • We fabricated various structures with mono and dual roughness through nano structuring of Si and studied their wetting behavior. • Dual rough structure shows higher static wetting angle and lower wetting angle hysteresis than that of mono structures. • Dual rough structure could be effective structure for moving droplet application.

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