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Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET

Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET .

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Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET

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  1. Capacitance-Voltage of Al2O3 Gate Dielectric by ALDon Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk,“Capacitance-voltage studies on enhancement-mode InGaAs metal-oxidesemiconductor field-effect transistor using atomic-layer-deposited Al2O3gate dielectric”, Appl. Phys. Lett., 88, 263518 (2006).

  2. Outline • Cross sections of an InGaAs MOSFET and an capacitor • Leakage current in different thermal annealing • C-V curve at high frequence • I-V Characteristic Curve on InGaAs MOSFET • Hysteresis in the CV loops measured at half value of acc-capacitance vs the small signal frequency • The accumulation capacitances and the normalized ones vs the small signal frequency at a wide range on the similar device • Split-CV Curve on MOSFET • The flat-band voltages vs the small signal with different oxide thicknesses

  3. Cross Sections of an E-mode Al2O3/InGaAsMOSFET and an Capacitor Al2O3 : Amorphous film At 750-850⁰ by RTA in N2

  4. Leakage Current in Different Thermal Annealing 850⁰C is critical temperture

  5. C-V Curve at High Frequence

  6. Hysteresis in the C-V Loop The bulk and interface properties start to degrade after annealing temperture higher than 800⁰C. 10-50 mV unannealing─hysteresis of ~200-500mV

  7. The acc-Capacitancesvs. Frequency at Wide Range Frequency dispersion is only 1% at this frequency range

  8. The Flat-band VoltagesvsThe Small Signal Frequency

  9. Split-CV Curve on MOSFET

  10. I-V Characteristic Curveof Enhancement-mode In-GaAsMOSFET

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