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Capacitance-Voltage of Al 2 O 3 Gate Dielectric by ALD on Enhancement-mode InGaAs MOSFET .
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Capacitance-Voltage of Al2O3 Gate Dielectric by ALDon Enhancement-mode InGaAs MOSFET Y. Xuan, H. C. Lin, P. D. Ye, and G. D. Wilk,“Capacitance-voltage studies on enhancement-mode InGaAs metal-oxidesemiconductor field-effect transistor using atomic-layer-deposited Al2O3gate dielectric”, Appl. Phys. Lett., 88, 263518 (2006).
Outline • Cross sections of an InGaAs MOSFET and an capacitor • Leakage current in different thermal annealing • C-V curve at high frequence • I-V Characteristic Curve on InGaAs MOSFET • Hysteresis in the CV loops measured at half value of acc-capacitance vs the small signal frequency • The accumulation capacitances and the normalized ones vs the small signal frequency at a wide range on the similar device • Split-CV Curve on MOSFET • The flat-band voltages vs the small signal with different oxide thicknesses
Cross Sections of an E-mode Al2O3/InGaAsMOSFET and an Capacitor Al2O3 : Amorphous film At 750-850⁰ by RTA in N2
Leakage Current in Different Thermal Annealing 850⁰C is critical temperture
Hysteresis in the C-V Loop The bulk and interface properties start to degrade after annealing temperture higher than 800⁰C. 10-50 mV unannealing─hysteresis of ~200-500mV
The acc-Capacitancesvs. Frequency at Wide Range Frequency dispersion is only 1% at this frequency range