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SEY of MgO and Al 2 O 3 as deposited by ALD. Slade Jokela, Igor Veryovkin, Alex Zinovev. MgO Thickness – 6nm ALD-deposited 12 at.% C. Al 2 O 3 Thickness – 9nm ALD-deposited 12 at.% C. Film Properties. SEY of Al 2 O 3. Significantly decreased electron beam current
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SEY of MgO and Al2O3 as deposited by ALD Slade Jokela, Igor Veryovkin, Alex Zinovev
MgO Thickness – 6nm ALD-deposited 12 at.% C Al2O3 Thickness – 9nm ALD-deposited 12 at.% C Film Properties
SEY of Al2O3 • Significantly decreased electron beam current • Decreased from ~6A to 0.01A • Dose effect seems to have diminished
UPS of Al2O3 and MgO • Spectra have decreased sensitivity to low energy electrons • Small magnetic fields can deflect electrons away from detector • Will apply bias voltage to sample
Future Plans • Apply voltage bias to sample • This will overcome detector’s “insensitivity” to low kinetic energy electrons • Install electron gun that can be defocused • This will allow us to cover a large area of the sample with electrons • Desorption of surface species may then be detectable by XPS