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TFA Gold Etchant (diluted 9:1)

TFA Gold Etchant (diluted 9:1). 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H 2 O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H 2 O afterwards. Profilometry done at CHANL. Performed 12.05.09 – Dmitry. Nb. Au. 1. 2. Fe. 3. 4. 5. 6.

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TFA Gold Etchant (diluted 9:1)

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  1. TFA Gold Etchant (diluted 9:1) 24-26 Å / sec. Conditions: 2 mL concentrated TFA in 18 mL of DI H2O. Room temp. Clean room. Sample was agitated continuously by hand. Rinsed in DI H2O afterwards. Profilometry done at CHANL. Performed 12.05.09 – Dmitry

  2. Nb Au 1 2 Fe 3 4 5 6 Ge (15mm*15mm) Each section is about 3mm*7mm RIE etching (@ SMiF) Fe = 0 Å / sec. Nb = 9.25 - 15 Å / sec. Ge = 726 – 900 Å / sec. Conditions: 100 W, CF4 = 40 sccm, O2 = 4 sccm. Performed 06.02.09 – Alex and/or Liang

  3. Plasma Asher (CHANL) S 1813 polymer. Non-linear. Conditions: 1 sccm O2 flow, varied power. Etching profile of square device Performed 12.03.09 – Dmitry

  4. 10 mM HCl 11-13 Å / sec. Conditions: 1mL of 3N (=3M) HCl diluted in ~ 300 mL of DI H2O. Continuously stirred with a magnetic stir bar. Washed with running DI H2O for 5+ min. Room temp., CHANL clean room. Profilometry done at CHANL. Mask – S1813. Performed 02.03.10 – Dmitry

  5. ICP – RIE Fe etch (SMiF) 6-7 Å / sec. Conditions: SMiF Trion Minilock II. 300 W ICP, 125 W RIE. BCl3 = 5±1 sccm, Cl2 = 45±1 sccm. Manual runs to make sure flow is stabilized. Sample: Si substrate, Ti/Fe 60/1000 Å. Profilometry done at SMiF. Mask – S1813. Performed 11.02.11 – Dmitry Note: although the rate was not measured, the etch does go through the Ti wetting layer and Si substrate, albeit at 500 W ICP.

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