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EE5342 – Semiconductor Device Modeling and Characterization Lecture 14 - Spring 2005

EE5342 – Semiconductor Device Modeling and Characterization Lecture 14 - Spring 2005. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. Y-parameter data. 1000 mV. 900 mV. 800 mV. 700 mV. 500 mV. 300 mV. Y-parameter data. 1000 mV. 900 mV. 800 mV. 700 mV. 500 mV.

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EE5342 – Semiconductor Device Modeling and Characterization Lecture 14 - Spring 2005

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  1. EE5342 – Semiconductor Device Modeling and CharacterizationLecture 14 - Spring 2005 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/

  2. Y-parameter data 1000 mV 900 mV 800 mV 700 mV 500 mV 300 mV

  3. Y-parameter data 1000 mV 900 mV 800 mV 700 mV 500 mV 300 mV

  4. The BJT is a “Si sandwich” Pnp (P=p+,p=p-) or Npn (N=n+, n=n-) BJT action: npn Forward Active when VBE> 0 and VBC< 0 E B C p n P VEB VCB Depletion Region Charge neutral Region Bipolar junctiontransistor (BJT)

  5. Charge neutral Region Depletion Region Emitter Base Collector x’E xB 0 0 0 x”c x x” x’ z -WE WB+WC WB 0 BJT coordinatesystems

  6. BJT boundary andinjection cond (npn)

  7. BJT boundary andinjection cond (npn)

  8. IC npn BJT(*Fig 9.2a)

  9. npn BJT bandsin FA region q(VbiE-VBE ) q(VbiC-VBC ) qVBE qVBC injection high field

  10. Coordinate system - prototype npn BJT (Fig 9.8*)

  11. Notation fornpn & pnp BJTs • NE, NB, NC E, B, and C doping (maj) • xE, xB, xC E, B, and C CNR widths • DE, DB, DC Dminority for E, B, and C • LE, LB, LC Lminority for E, B, and C (L2min = Dmin tmin) • tE0, tB0, tC0 minority carrier life- times for E, B, and C regions

  12. Notation fornpn BJTs only • pEO, nBO, pCO: E, B, and C thermal equilibrium minority carrier conc • pE(x’), nB(x), pC(x’’): positional mathe- matical function for the E, B, and C total minority carrier concentrations • dpE(x’), dnB(x), dpC(x’’): positional ma- thematical function for the excess minority carriers in the E, B, and C

  13. Notation forpnp BJTs only • nEO, pBO, nCO: E, B, and C thermal equilibrium minority carrier conc • nE(x’), pB(x), nC (x’’): positional mathe- matical function for the E, B, and C total minority carrier concentrations • dnE(x’), dpB(x), dnC(x’’): positional ma- thematical function for the excess minority carriers in the E, B, and C

  14. npn BJT boundary conditions

  15. Emitter solutionin npn BJT

  16. Base solutionin npn BJT

  17. Collector solutionin npn BJT

  18. Hyperbolic sinefunction

  19. npn BJT regionsof operation VBC Reverse Active Saturation VBE Forward Active Cutoff

  20. npn FA BJT minoritycarrier distribution (Fig 9.4*)

  21. npn RA BJT minoritycarrier distribution (Fig 9.11a*)

  22. npn cutoff BJT mincarrier distribution (Fig 9.10a*)

  23. npn sat BJT minoritycarrier distribution (Fig 9.10b*)

  24. Defining currents inFA mode npn BJT (Fig 9.13*)

  25. References 1 OrCAD PSpice A/D Manual, Version 9.1, November, 1999, OrCAD, Inc. 2 Semiconductor Device Modeling with SPICE, 2nd ed., by Massobrio and Antognetti, McGraw Hill, NY, 1993. * Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997.

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