Obstacle: Low growth rate.
TEM of a -LiNbO 3 /LiNbO 3 substrate interface after anneal. Objective: Photonic crystal based integrated optic & THz devices based on patterned, epitaxial LiNbO 3 thin films. Obstacle: Low growth rate. Solutions: Eliminate OH as source of autocatalytic cycle ( e.g ., Me 3 ClSi).
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