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Electronics, microelectronics, nanoelectronics, … Part II

Electronics, microelectronics, nanoelectronics, … Part II. Mizsei , János www.eet.bme.hu. Outline. nanoscale effects 3-2-1-0 dimensions atomic scales : different transport mechanisms ( thermal , electrical , mechanical ) technology at nanoscale lithography by nanoballs nanoimprint

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Electronics, microelectronics, nanoelectronics, … Part II

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  1. Electronics, microelectronics, nanoelectronics, …Part II Mizsei, Jánoswww.eet.bme.hu

  2. Outline • nanoscaleeffects • 3-2-1-0 dimensions • atomicscales: differenttransportmechanisms (thermal, electrical, mechanical) • technologyatnanoscale • lithographybynanoballs • nanoimprint • Langmuir-Blodgetttechnology • MBE – molecularbeamepitaxy • FIB – focused ion beam • AFM, STM processes • nanoscaledevices • QWFET • singleelectrondevices • nanotubes • nanorelays • organic molecular integrated circuits • vacuum-electronics • spintronics • kvantum-computing • oxideelectronics • thermalcomputing

  3. Nanoscale effects • density of states for • 3 • 2 • 1 • 0 dimension objects • tunnelling • surface/interfacescattering • ballistictransport

  4. Technologies at nanoscale • lithographybynanoballs • nanoimprint • Langmuir-Blodgetttechnology • MBE – molecularbeamepitaxy • FIB – focused ion beam • AFM, STM processes

  5. Lithographybynanoballs

  6. Nanoimprint

  7. Nanoimprint

  8. Langmuir-Blodgett technology formolecularmonolayer

  9. MBE – molecular beam epitaxy Computer controlledevaporation (PVD)

  10. MBE – molecular beam epitaxy

  11. FIB – focused ion beam

  12. FIB – focused ion beam • Applications of FIB: • cross-sectional imaging through semiconductor devices (or any layered structure) • modification of the electrical routing on semiconductor devices • failure analysis • preparation for physico-chemical analysis • preparation of specimens for transmission electron microscopy (TEM) or other analysis • micro-machining • mask repair

  13. FIB – focused ion beam FIB drilled nanoholeforthermalnanoswitchwithPtoverlayer

  14. AFM processes Hotplatefor AFM excitedagglomeration and peeloff Nanostructures by AFM tip excitation of hot (120 oC) silver nanolayers

  15. AFM processes Quantum corall by AFM tip (Fe on Cu surface)

  16. AFM processes: anodic oxidation by AFM tip

  17. Microscopic charges on SiO2 surfaces Si: P type, <100>, 10 ohmcm 100 nm native oxide oxide

  18. Charging process:(AFM, “conducting wire”) Measuring process: (Kelvin electric force microscopy) Low resolution, compared to the charging process !

  19. 11:30:29 AM Fri Aug 19 2005 3 V 2 1 -1 -2 -3 04:11:07 PM Thu Aug 18 2005 3 V 2 1 -1 -2 -3

  20. 11:30:29 AM Fri Aug 19 2005 Only after 300 C heat treatment ! 3 V 2 1 -1 -2 -3 04:11:07 PM Thu Aug 18 2005 3 V 2 1 -1 -2 -3

  21. Microscopic charge on the SiO2 surface Extremely high and inhomogeneous electric field: 700000V/m

  22. Nanoscale devices • QWFET • singleelectrondevices • nanotubes • nanorelays • organic molecular integrated circuits • vacuum-electronics • spintronics • oxideelectronics • thermalcomputing

  23. QWFET – quantum well fet • low bandgap enables lower supply voltage • higher bangap substrate helps to keep electrons in the channel • higher mobility results in higher current Schottky-barriertype (depletion) device

  24. QWFET • Problematic point: compound semiconductor in Si based technology

  25. Advantages of QWFET • higher speed at lower power dissipation

  26. Single electron transistor - SET

  27. Fabrication of SET by STM tip anodisation

  28. Single electron devices: charge-memory • SET read-out • 50 nm head-surfacedistance • ~10 nm grainsize • ~10 Terabit/inch2

  29. Carbon • diamond • graphite

  30. Graphene, carbon nanotubes

  31. Carbon nanotubes as quantum wires density of statesdependingofchirality

  32. Carbonnanotubedevices: CNT

  33. Micro-, and nanorelays • nanorelays: instable mechanical movement, stick down Nanorelays

  34. Molecularsingleelectronswitchingtransistor (MOSES) Atom relaytransistor (ART)

  35. Organic molecular integrated circuits

  36. Organic molecular integrated circuits ~100 nm2

  37. Organic molecular integrated circuits • Problems with the organic molecular ICs: • technology (it has not been realised until now) • metal contacts and wires (atomic contact) • chemical instability • slow operation depending on number of electrons/bit ratio

  38. Vacuum-electronics: nanosised „Vacuum tube” • Vertical field emission: Lateral field emission: • MOSFET- like • gated devices

  39. Field emission • by gate control

  40. Technology resistplasmatreatment and reflow

  41. Characteristics of the nanosised „Vacuum tube”

  42. Spintronics, Stern-Gerlach experiment

  43. Spin: Einstein–de Haas effect Switch on and off with the resonance frequency of the suspended mass

  44. GMR - giant magnetoresistance Lowresistancehighresistance

  45. Spin- valve MRAM

  46. Spin- transistor on

  47. Spin- transistor off

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