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Ideal currents in a pn Junction. Debye length. +. -. +. +. +. +. +. +. +. +. -. -. -. -. -. -. -. -. +. Debye length. +. -. +. +. +. +. +. +. +. +. -. -. -. -. -. -. -. -. +. Transient sheath in ion acoustic wave experiments in a plasma. Charge neutrality.
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Transient sheath in ion acoustic wave experiments in a plasma
Charge neutrality Approaches zero
Review of pn junctions reverse & forward bias
Metallurgical junction Basic model p n
E Basic model p n - + Depletion layer all mobile charges disappear due to the electric field
p n E Basic model – thermal equilibriumno applied bias voltage Thermal equilibrium implies Fermi energies are the same. Energy
p p n n E Reverse biased PN junction
p n p n E Forward biased PN junction - + Electron flow Hole flow
Schottky barrier junctionThermal equilibrium n Energy - Depletion width
n n n Schottky barrier junction
Basic assumptions p n Low injection
E Basic assumptions p n - + Majority carriers -- thermal equilibrium
p n Basic assumptions Minority carriers -- thermal equilibrium
p n Basic assumptions
p n Electron energy profile
p n Charge concentration Complete ionization
p n Charge concentration Minority carrier concentration is related to majority carrier concentration
p n p n Forward biased PN junction
p n p n Forward biased PN junction Minority carriers increase electron density in the n region
p n p n Forward biased PN junction Similarly
p n p n Forward biased PN junction
p n p n Forward biased PN junction Similar density equations result from a reverse bias applied voltage. Minority density will be significantly smaller.
Evolution of the density perturbations Diffusion of the perturbation Drift due to the electric field Generation of additional perturbation Collision lifetime Steady-state Neglect drift and generation
Evolution of the density perturbations Minority carrier diffusion lengths
Evolution of the density perturbations Minority carrier diffusion lengths