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Fig. 5. L–I characteristics of three LEDs.

C. B. a t 20mA:. A. Fig. 5. L–I characteristics of three LEDs. Conclusion. In summary, nitride-based LEDs with MQW active regions grown by different temperature profiles were prepared by MOVPE.

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Fig. 5. L–I characteristics of three LEDs.

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  1. C B at 20mA: A Fig. 5. L–I characteristics of three LEDs.

  2. Conclusion • In summary, nitride-based LEDs with MQW active regions grown by different temperature profiles were prepared by MOVPE. • Compared with conventional samples, the reduced reverse leakage current and improved ESD characteristics of the LEDs are achievable using both temperature ramping and temperature cycling methods. • However, the major drawback associated with the temperature ramping is its tendency to degrade relevant optical properties of devices as result of the desorption of In atoms.

  3. Thanks for your attention!

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