270 likes | 423 Views
Structure and Operation of the MOSFET 24 and 26 March 2014. FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA. Metal layer. + + + + + + + + + + + + +. Oxide layer. +. n-type inversion layer. - - - - - - - - - - - -.
E N D
Structure and Operation of the MOSFET 24 and 26 March 2014
FET Circa 1964-Commercial Introduction First FET IC Circa 1964 By RCA
Metal layer + + + + + + + + + + + + + Oxide layer + n-type inversion layer - - - - - - - - - - - - P-type - MOS Inversion Layer With large positive gate bias, there will be electrons at the interface between the oxide and semiconductor, which leads to formation of a thin n-type inversion layer Threshold voltage VT: applied gate voltage required to achieve the threshold inversion 10