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Experiments

Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW. However, the proposed methods were required to stop the growth

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Experiments

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  1. Previously, it has been shown that one can use the temperature ramping method (i.e., to grow the InGaN well layers and GaN barrier layers at different temperatures) to improve crystal quality of InGaN–GaN MQW. • However, the proposed methods were required to stop the growth for a short period of time; an interruption during the growth of InGaN–GaN MQW might contribute to the out-diffusion and/or desorption of In atoms. • In this letter, we report the use of the temperature cycling method to further improve the quality of the MQW structure and the performance of nitride-based LEDs.

  2. Experiments 1050 ℃ 0.2um Mg-dopedGaN InGaN well : 3nm GaN barrier :15nm five periods MQWs 1050 ℃ 2um Si-doped n-GaN 1um undopedGaN layer 1050 ℃ 520 ℃ 30nm GaN nucleation layer c-plane Sapphire

  3. Results and Discussion Fig. 1. Three different temperature profiles used to grow the MQW active regions in this study.

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