1 / 14

Ranjeet Center for Detector & Related Software Technology (CDRST)

TCAD Simulation of Geometry Variation under HPK campaign. Ranjeet Center for Detector & Related Software Technology (CDRST) Department of Physics and Astrophysics, University of Delhi (DU), Delhi, INDIA On behalf of Si Sensor Simulation Group. TCAD Simulation vs. Measurement

uriah
Download Presentation

Ranjeet Center for Detector & Related Software Technology (CDRST)

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. TCAD Simulation of • Geometry Variation • under HPK campaign Ranjeet Center for Detector & Related Software Technology (CDRST) Department of Physics and Astrophysics, University of Delhi (DU), Delhi, INDIA On behalf of Si Sensor Simulation Group

  2. TCAD Simulation vs. Measurement Active thickness: 300 mm

  3. 5-STRIP Simulation 5-strip Structure Simulations SILVACO Simulated Structure (zoomed) • We have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

  4. Simulation Parameters – Same for all 12 configurations 1) Temp = 21 deg C corresponding to 294 K 2) n+ implant of 30 micron from the back side 3) Strip length for normalization = 3.0490 cm 4) Total device depth is 320 micron. 5) Frequency = 1MHz SILVACO Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same.

  5. FZ320N (Comparison Cint) SILVACO There is a change in curvature but the saturation value is almost same with old & new set of parameters. 5

  6. FZ320N (Comparison E. filed) MSSD No-3 MSSD No-7 MSSD No-11 SILVACO Pitch = 80 Old Set New Set Vbias = 400V The E. Field is showing similar values & behaviour with new set of parameters. Almost similar E.Field with old & new set of parameteres

  7. FZ320N (E Field) Old Set SILVACO MSSD No-1 MSSD No-2 MSSD No-5 MSSD No-6 MSSD No-9 MSSD No-10 Pitch = 240 Pitch = 120 Vbias = 400V E Field decreases as the width of the strip implant increases

  8. FZ320N (E Field) OLD SET SILVACO MSSD No-3 MSSD No-4 MSSD No-7 MSSD No-8 MSSD No-11 MSSD No-12 Pitch = 70 Pitch = 80 Vbias = 400V E Field decreases as the width of the strip implant increases

  9. Simulation of Cint for Multi-SSD with Double P-stops Double P-stops 4µm wide separated by 6µm Simulated Structure – zoomed region • Instead of two adjacent half- P+neighbouring strips, we have considered five strips in which Cint is evaluated by sending AC signal to central electrode and measuring it w.r.t. two adjacent strips (which are shorted).

  10. Simulation Parameters–Fz320P 1) Temp = 21 deg C corresponding to 294 K 2) n+ implant of 30 micron from the back side 3) Strip length for normalization = 3.0490 cm 4) Total device depth is 320 micron 5)For FZ320P, Double P-stop (each 4µm wide separated by 6µm) 5) Frequency = 1MHz SILVACO Only Width and Pitch are changed in 12 configurations (according to MSSD design) keeping all other parameters same.

  11. FZ320P (Comparison Cint) SILVACO There is a change in curvature but the saturation value around 400V is almost same with old & new set of parameters. 11

  12. FZ320P (Comparison E. filed) MSSD No-3 MSSD No-7 MSSD No-11 SILVACO Pitch = 80 Old Set New Set Vbias = 400V The E. Field is showing similar values & behaviour with new set of parameters. The behaviour of E.fieldhas changed but maximum value is almost same.

  13. FZ320P (E Field) Old Set SILVACO MSSD No-1 MSSD No-2 MSSD No-5 MSSD No-6 MSSD No-9 MSSD No-10 Pitch = 240 Pitch = 120 Vbias = 400V E Field decreases as the width of the strip implant increases

  14. FZ320N (E Field) OLD SET SILVACO MSSD No-3 MSSD No-4 MSSD No-7 MSSD No-8 MSSD No-11 MSSD No-12 Pitch = 70 Pitch = 80 Vbias = 400V E Field decreases as the width of the strip implant increases

More Related