1 / 20

Outline Achieved MAPS (Monolithic Active Pixel Sensors) performances R&D for improving MAPS performances Increase re

Achievements & Perspectives of MIMOSA Sensors (MAPS) for Vertexing Applications Christine Hu-Guo (IPHC) on behalf of IPHC (Strasbourg) & IRFU (Saclay) collaboration. Outline Achieved MAPS (Monolithic Active Pixel Sensors) performances R&D for improving MAPS performances

ursa
Download Presentation

Outline Achieved MAPS (Monolithic Active Pixel Sensors) performances R&D for improving MAPS performances Increase re

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Achievements & Perspectives of MIMOSA Sensors (MAPS) for Vertexing ApplicationsChristine Hu-Guo (IPHC)on behalf of IPHC (Strasbourg) & IRFU (Saclay) collaboration Outline • Achieved MAPS (Monolithic Active Pixel Sensors)performances • R&D for improving MAPS performances • Increase readout speed  Fast readout architecture • Applications and perspectives • Improve radiation tolerance • Projection beyond present (2D sensors) & perspectives • Conclusion

  2. Development of MAPS for Charged Particle Tracking • In 1999, the IPHC CMOS sensor group proposed the first CMOS pixel sensor (MAPS) for future vertex detectors (ILC) • Numerous other applications of MAPS have emerged since then • ~10-15 HEP groups in the USA & Europe are presently active in MAPS R&D • Original aspect: integrate sensitive volume (EPI layer) and front-end readout electronics on the same substrate • Charge created in EPI, excess carries propagate thermally, collected by NWELL/PEPI , with help of reflection on boundaries with P-well and substrate (high doping) • Q = 80 e-h / µm  signal < 1000 e- • Compact, flexible • EPI layer ~10–15 µm thick • thinning to ~30–40 µm permitted • Standard CMOS fabrication technology • Cheap, fast multi-project run turn-around • Room temperature operation • Attractive balance between granularity, material budget, radiation tolerance, read out speed and power dissipation • BUT • Very thin sensitive volume  impacts signal magnitude (mV!) • Sensitive volume almost un-depleted  impacts radiation tolerance & speed • Commercial fabrication (parameters)  impacts sensing performances & radiation tolerance • NWELL used for charge collection  restricts use of PMOS transistors R.T. IRFU - IPHC christine.hu@ires.in2p3.fr

  3. MIMOTEL M18 MIMOSTAR Chip dimension: ~2 cm² LUSIPHER Achieved Performances with Analogue Readout • MAPS provide excellent tracking performances • Detection efficiency ~100% • ENC ~10-15 e- • S/N > 20-30 (MPV) at room temperature • Single point resolution ~ µm, a function of pixel pitch • ~ 1 µm (10 µm pitch), ~ 3 µm (40 µm pitch) MAPS: Final chips: • MIMOTEL (2006): ~66 mm², 65k pixels, 30 µm pitch EUDET Beam Telescope (BT) demonstrator • MIMOSA18 (2006): ~37 mm², 262k pixels, 10 µm pitch High resolution EUDET BT demonstrator • MIMOSTAR (2006): ~2 cm², 204k pixels, 30 µm pitch Test sensor for STAR Vx detector upgrade • LUSIPHER (2007): ~40 mm², 320k pixels, 10 µm pitch Electron-Bombarded CMOS for photon and radiation imaging detectors IRFU - IPHC christine.hu@ires.in2p3.fr

  4. Radiation tolerance (preliminary) • Ionising radiation tolerance: • O(1 M Rad) (MIMOSA15, test cond. 5 GeV e-, T = -20°C, tint~180 µs) • tint << 1 ms, crucial at room temperature • Non ionising radiation tolerance: depends on pixel pitch: • 20 µm pitch:2x1012 neq /cm2, (Mimosa15, tested on DESY e- beams, T = - 20°C, tint ~700 μs) • 5.8·1012neq/cm² values derived with standardand with soft cuts • 10 µm pitch:1013 neq /cm2, (MIMOSA18, tested at CERN-SPS , T = - 20°C, tint ~ 3 ms) • parasitic 1–2 kGy gas  N ↑ • Further studies needed : • Tolerance vs diode size, Readout speed, Digital output, ... , Annealing ?? IRFU - IPHC christine.hu@ires.in2p3.fr

  5. System integration • Industrial thinning(via STAR collaboration at LBNL) • ~50 µm, expected to ~30-40 µm • Ex. MIMOSA18 (5.5×5.5 mm² thinned to 50 μm) • Development of ladder equipped with MIMOSA chips (coll. with LBNL) • STAR ladder (~< 0.3 % X0 )  ILC (<0.2 % X0 ) • Edgeless dicing / stitching  alleviate material budget of flex cable IRFU - IPHC christine.hu@ires.in2p3.fr

  6. MIMOSA22 Pixel Array Analogue processing / pixel Pixel array 136 x 576 pitch 18.4 µm 128 discriminators SUZE-01 A/D: 1 ADC ending each column Zero suppression Bias DC-DC Data transmission 5-bit ADC MAPS performance Improvement R&D organisation : 4 (5) simultaneous prototyping lines Architecture of pixel array organised in // columns read out: • Pre-amp and CDS in each pixel • A/D: 1 discriminator / column (offset compensation) • Power vs Speed • Power  Readout in a rolling shutter mode • Speed  Pixels belonging to the same row are read out simultaneously • MIMOSA8 (2004), MIMOSA16 (2006), MIMOSA22 (2007/08) Zero suppression circuit: Reduce the raw data flow of MAPS Data compression factor ranging from 10 to 1000, depending on the hit density per frame SUZE-01 (2007) 4–5 bits ADCs (~103 ADC per sensor) Potentially replacing column-leveldiscriminators 5 bits: sp ~1.7–1.6 µm 4 bits: sp < 2 µm for 20 µm pitch Next step: integrate column-level ADC with pixel array Serial link transmission with clock recovery Prototype (2008-2009) Voltage regulator & DC-DC converter IRFU - IPHC christine.hu@ires.in2p3.fr

  7. 0.64 mV 0.22 mV MIMOSA22 + SUZE-01 Test Results • MIMOSA22: (15 µm EPI) 136 x 576 pixels + 128 column-level discriminators • SUZE-01: • Lab. test : • Design performances reproduced up to 1.15 × design read-out frequency (115 MHz at room Temp ): • No pattern encoding error, can handle > 100 hits/frame at rate ~200 ns per pixel row • Still to do : improve radiation tolerance (SEU, SEL) of digital circuits (including memories) • Laboratory test: • Temporal Noise: 0.64 mV  12 e- • FPN: 0.22 mV  4 e- • Beam test at CERN SPS (120 GeV pions) • Threshold ~ 4 mV  6 x σ noise • Detection Efficiency > 99.5% • Single point resolution < 4 µm • Fake rate < 10-4 IRFU - IPHC christine.hu@ires.in2p3.fr

  8. MIMOSA26: 1st MAPS with Integrated Ø CMOS 0.35 µm OPTO technology, Chip size : 13.7 x 21.5 mm2 • Pixel array: 576 x 1152, pitch: 18.4 µm • Active area: ~10.6 x 21.2 mm2 • In each pixel: • Amplification • CDS (Correlated Double Sampling) • Integration time: ~ 100 µs  R.O. speed: 10k frames/s • Hit density: ~ 106 particles/cm²/s • Testability: several test points implemented all along readout path • Pixels out (analogue) • Discriminators • Zero suppression • Signal transmission Row sequencer Width: ~350 µm • 1152 column-level discriminators • offset compensated high gain preamplifier followedby latch Zero suppression logic Reference Voltages Buffering for 1152 discriminators I/O PadsPower supply PadsCircuit control PadsLVDS Tx & Rx Current Ref. Bias DACs Readout controller JTAG controller Memory management Memory IP blocks PLL, 8b/10b optional IRFU - IPHC christine.hu@ires.in2p3.fr

  9. Test MIMOSA26 (Lab. + beam test) • Measured temporal noise = 0.6-0.7 mV and FPN = 0.3-0.4 mV for pixel array with its associated discriminators. • These values are equivalent to those obtained with Mimosa22. • It shows a good uniformity of the whole 576 x 1152 pixels with the 1152 discriminators • ~ 30 MIMOSA26 chips are tested (only 1 "dead") • The characterization of Mimosa26 is complemented by the beam tests (Sept. 2009) • 6 MIMOSA26 chips running simultaneously at nominal speed • Tracking successful • data analysis is underway, preliminary results show similar performances as MIMOSA22 IRFU - IPHC christine.hu@ires.in2p3.fr

  10. y z x MIMOSA26 = Final Sensor for EUDET Beam Telescope • EUDET supported by the European Union in the 6th Framework Programme • Provide to the scientific community an infrastructure aiming to support the detector R&D for the ILC • JRA1 (Joint Research Activity): High resolution pixel beam telescope (BT) • Two arms each equipped with three layers of pixel sensors (MIMOSA) • DUT is located between these arms and moveable via X-Y table • EUDET beam telescope specifications: • High extrapolated resolution < 2 µm • Large sensor area ~ 2 cm2 • High read-out speed ~ 10 k frame/s • Hit density: up to 106 hits/s/cm2 Pixel Sensor MIMOSA26 13.7 mm (DUT) 21.5 mm Being Mounted on EUDET beam telescope Preliminary test results from the EUDET collaboration: • 3 MIMOSA26 chips mounted as DUT in BT demonstrator in July • BT tracks reconstructed in the 3 planes  residues compatible with σsp ~ 3.5-4 μm IRFU - IPHC christine.hu@ires.in2p3.fr

  11. Extension of MIMOSA-26 to STAR • Final HFT (Heavy Flavour Tracker) - PIXEL sensor : • MIMOSA-26 with active surface × ~1.7 • 1088 col. of 1024 pixels  1.1 million pixels • Pitch : 18.4 μm  (~20.0 x 18.8 mm²) • Integration time 200 μs • Design from now  fab. Feb. 2010 • 1st physics data expected in 2011/12 • Critical points: • Reduction of power consumption • Radiation tolerance improvement Also: • Integrated voltage reference • High speed transmission Pixel Vx Detector ~22.4 mm Inner Layer: 10 ladders Outer Layer: 30 ladders 10 sensors / ladder ~20.4 mm STAR Detector Upgrade IRFU - IPHC christine.hu@ires.in2p3.fr

  12. Extension of MIMOSA-26 to CBM/FAIR & ILC • Micro Vertex Detector (MVD) of the CBM H.I. fixed target expt : • 2 double-sided stations equipped with MIMOSA sensors • MIMOSA-26 with double-sided read-out  readout speed ! • Active surface : 2 x 1152 columns of 256 pixels • 21.2 x 9.4 mm2 • tint. ~ 40 μs • < 25 μs in < 0.18 μm techno. • Prototyping until 2012  start of physics in 2013/14 (?) • Vertex detector of the ILC: • tint. ~ 25 μs (innermost layer)  double-sided readout • tint. ~ 100 μs (outer layer)  Single-sided readout • 2 μm (4-bit ADC, 20 µm) < sp < 3 μm (discri. 14 µm pitch) • Pdiss < 0.1–1 W/cm² × 1/50 duty cycle ILD design: 2 options • Critical points: • Power pulsing • Design for the innermost layer: • Small pixel pitch • Faster readout speed 3 double layers 5 single layers IRFU - IPHC christine.hu@ires.in2p3.fr

  13. Radiation Tolerance Improvement • Ionising radiation tolerance1. Special layout • Diode level (already realized): Remove thick oxide surrounding N-well diode by replacing with thin-oxide without design rule violation!! • Pixel circuit level: ELT for the transistors connected to the detection diode 2. Minimise integration time Increase readout speed: Minimise leakage current IRFU - IPHC christine.hu@ires.in2p3.fr

  14. Radiation Tolerance Improvement • Non ionising radiation toleranceHigh resistivity sensitive volume  faster charge collection • Exploration of a VDSM technology with depleted (partially ~30 µm) substrate: • Project "LePix" driven by CERN for SLHC trackers (attractive for CBM, ILC and CLIC Vx Det.) • Exploration of a technology with high resistivity thin epitaxial layer • XFAB 0.6 µm techno: ~15 µm EPI ( ~ O(103).cm), Vdd = 5 V (MIMOSA25)  Benefit from the need of industry for improvement of the photo-sensing elements embedded into CMOS chip TCAD Simulation 15 µm high resistivity EPI compared to 15 µm standard EPI For comparison: standard CMOS technology, low resistivity P-epi high resistivity P-epi: size of depletion zone size is comparable to the P-epi thickness! IRFU - IPHC christine.hu@ires.in2p3.fr

  15. Landau MP (in electrons) versus cluster size 0 neq/cm² 0.3 x 1013 neq/cm² 1.3 x 1013 neq/cm² 3 x 1013 neq/cm² MIMOSA25 in a high resistivity epitaxial layer • 20 μm pitch, + 20°C, self-bias diode @ 4.5 V, 160 μs read-out time • Fluence ~ (0.3 / 1.3 / 3·)1013 neq/cm2 • Tolerance improved by > 1 order of mag. • Need to confirm det (uniformity !) with beam tests MIMOSA25 saturation -> >90 % of charge is collected is 3 pixels -> very low charge spread for depleted substrate 16x96 Pitch 20µm To compare: «standard» non-depleted EPI substrate: MIMOSA15 Pitch=20µm, before and after 5.8x1012 neq/cm2 IRFU - IPHC christine.hu@ires.in2p3.fr

  16. Analog Readout Circuit Analog Readout Circuit Analog Readout Circuit Analog Readout Circuit Diode Diode Diode Diode digital process (number of metal layers)feature size fast laser driver, etc. 3D - MAPS 2D - MAPS Pixel Controller, A/D conversion Digital Analog ~ 50 µm Pixel Controller, CDS Sensor TSV: Through Silicon Vias ~ 20 µm Using 3DIT to improve MAPS performances • 3DIT are expected to be particularly beneficial for MAPS : • Combine different fabrication processes • Resorb most limitations specific to 2D MAPS • Split signal collection and processing functionalities, use best suited technology for each Tier : • Tier-1: charge collection system  Epitaxy (depleted or not), deep N-well ?  ultra thin layer X0  • Tier-2: analogue signal processing analogue, low Ileak, process (number of metal layers) • Tier-3: mixed and digital signal processing • Tier-4: data formatting (electro-optical conversion ?) • Run in Chartered - Tezzaron technology • 130 nm, 2-Tier run with "high"-res substrate (allows m.i.p. detection) • Tier A to tier B bond Cu-Cu bond • 3 D consortium: coordinated by FermiLab • FermiLab • INFN • IN2P3-IRFU • Univ. of Bonn • CMP IRFU - IPHC christine.hu@ires.in2p3.fr

  17. Acquisition Readout ~1 ms ~200 ms ~1 ms Tier 1 Tier 2 A B TS & R.O. Detection diode or Q injection Amplifier Amp.+Shaper Discriminator Hit identification 5 bits (7?) Time Stamp 2nd hit flag ReadOut ASD + 12 µm 12 µm Detection diode & Amp 24 µm IPHC & IRFU 3D MAPS • Delayed R.O. Architecture for the ILC Vertex Detector • Try 3D architecture based on small pixel pitch, motivated by : • Single point resolution < 3 μm with binary output • Probability of > 1 hit per train << 10 % • 12 μm pitch : • sp ~ 2.5 μm • Probability of > 1 hit/train < 5 % • Split signal collection and processing functionalities : • Tier-1: A: sensing diode & amplifier, B: shaper & discriminator • Tier-2: time stamp (5 bits) + overflow bit & delayed readout  Architecture prepares for 3-Tier perspectives : 12 µm • Tier-1: CMOS process adapted to charge collection • Tier-2: CMOS process adapted to analogue & mixed signal processing • Tier-3: digital process (<< 100 nm ????) IRFU - IPHC christine.hu@ires.in2p3.fr

  18. Tier-1 Tier-2 Tier-3 off <10 mV Cf~10fF G~1 Digital RD Cc=100fF Vth Cd~10fF Tezzaron (metal-metal (Cu) thermocompression) Ziptronix (Direct Bond Interconnect, DBI®*) IPHC 3D MAPS: Self Triggering Pixel Strip-like Tracker (STriPSeT) • Combine Tezzaron/Chartered 2-tiers process with XFAB high resistivity EPI process • Tier-1: XFAB, 15 µm depleted epitaxy  ultra thin sensor!!! • Fully depleted  Fast charge collection (~5ns)  should be radiation tolerant • For small pitch, charge contained in less than two pixels • Sufficient (rather good) S/N ratio defined by the first stage • “charge amplification” ( >x10) by capacitive coupling to the second stage • Tier-2: Shaperless front-end: (Pavia + Bergamo) • Single stage, high gain, folded cascode based charge amplifier, with a current source in the feedback loop  Shaping time of ~200 ns very convenient: good time resolution • Low offset, continuous discriminator • Tier-3: Digital: Data driven (self-triggering), sparsified binary readout, X and Y projection of hit pixels pattern • Matrix 256x256  2 µs readout time • DBI® – Direct Bond Interconnect, low temperature CMOS compatible direct oxide bonding with scalable interconnect for highest density 3D interconnections (< 1 µm Pitch, > 108/cm /cm² Possible) IRFU - IPHC christine.hu@ires.in2p3.fr

  19. Digital Memory and Digital Readout LATCH_D DREAD Discriminator Tier-2 Tier-1 IRFU & IPHC 3D MAPS: RSBPix • FAST R.O. architecture aiming to minimise power consumption • Subdivide sensitive area in ”small” matrices running INDIVIDUALLY in rolling shutter mode • Adapt the number of raws to required frame r.o. time  few µs r.o. time may be reached (???) • Planned also to connect this 2 tier circuit to XFAB detector tier IRFU - IPHC christine.hu@ires.in2p3.fr

  20. Conclusion • 2D MAPS have reached necessary prototyping maturity for real scale applications : • Beam telescopes allowing for sp ~ few μm & 106 particles/cm²/s • Vertex detectors requiring high resolution & very low material budget • The emergence of fabrication processes with depleted epitaxy / substrate opens the door to : • Substantial improvements in read-out speed and non-ionising radiation tolerance • "Large pitch" applications  trackers (e.g. Super LHC ) • Translation to 3D integration technology : • Resorb most limitations specific to 2D MAPS • T type & density, peripheral insensitive zone, combination of different CMOS processes • Offer an improved read-out speed : O(μs) ! • Many difficulties to overcome (ex. heat, power) • R&D in progress  2009/10 important step for validation of this promising technology IRFU - IPHC christine.hu@ires.in2p3.fr

More Related