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Radiation Hardness of 1550 nm Edge-Emitting Laser for CDF Silicon Tracker Optical Links

Study on radiation tolerance & performance of laser transmitters & receivers in CDF silicon tracker for optical links. Analysis of irradiation effects, degradation rates, and annealing processes.

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Radiation Hardness of 1550 nm Edge-Emitting Laser for CDF Silicon Tracker Optical Links

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  1. Radiation hardness of the 1550 nm edge emitting laser for the optical links of the CDF silicon tracker S. Hou 15-Jun-2004

  2. Optical links at CDF • Dense Optical Interface Module (DOIM) • Byte-wide parallel optical link • 8-bits + clock • 53 Mbyte/sec, BER10-12 • Laser transmitter • Edge-emitting diode array • Ribbon fiber cable (22 m) • multi-mode Ge doped • PIN receiver

  3. DOIM modules • Laser diode transmitters • on Port Cards inside detector • Total 570 transmitters • 128 Port Cards, • PIN diode receivers • on FTM board out in VME crates

  4. Laser transmitter • InGaAs/InP Edge-emitting laser diode array • 1550 nm wavelength • 12-ch diode array, 250 m pitch • Bare die power, 1 mW/ch @20mA • Custom made by Chunghwa Telecom • biCMOS ASIC driver • bipolar transistors, AMS 0.8 m process • Inputs: Diff. ECL or LVDS • differential 100 mV • Enable by TTL low • Output light: adjustable by • ~2mA/0.1V • At Vcc-VLD=3V, 20mA/ch

  5. Laser transmitter assembly • Die-bond / Wire bond • laser-diode array on BeO submount • driver chip on substrate • fibers on V-groove • Alignment • fibers to laser emitting facets • Ligut ouput at fiber end: • 200 ~ 800 W/ch

  6. Receiver module • InGaAs/InP PIN diode • 12-ch array, 1550 nm • by TL, Chunghwa Telecom. • Operation condition : • light on: 50 ~ 800 W • light off: 10 W • 1.1 W/module • Outputs : • Nine independent diff. ECL • Die-bond / Wire bond • PIN-diode array on Al2O3 submount • driver chip on substrate • fibers on V-groove to PIN diodes

  7. Laser transmitter characteristics • Inputs: • ECL or LVDS signal • TTL-enable Light by O/E probe Input ECL TTL enable

  8. Laser transmitter current balance • Constant Current • through LDA or dummy 50 • max. I ~ 7mA/module (<4%) • Prevent wirebond resonance Broken bond observed for 2 mm AlSi bond at 15 kHz Current probe O/E light TTL enable

  9. Laser diode: L-I-V • Laser light at I,V and Temperature • I-V approximately linear • Duty cycle • stable output to input 50% • Linear to temperature Temp (oC)

  10. Rad-hard requirement at CDF • Transmitters on Portcard at r= 15 cm • 450 pb-1 delivered to CDF • TLD (thermoluminescence Dosimeters) measurement ~ 15 rad / pb-1 (5.8E8 MIPs/cm2) CDF luminosity TLD radiaition measurement in CDF tracking volume (http://ncdf67.fnal.gov/~tesarek/radiation) Portcard position

  11. Bulk damage to laser light yield • Laser transmitter specification : 200 krad tolerance • Bulk damage is dominant • Ratio of light drop is consistent for a module, indep. of light power • Degradation10% for 200 krad UC Davis proton 63.3 MeV AC mode on PortCard 200 krad=1.8E12/cm2 (12E12 /cm2 1MeV n) INER proton 30 MeV DC mode 200 krad=1.1E12/cm2(8E12 /cm2 1MeV n)

  12. INER 30 MeV proton Irradiation • transmitter in DC mode • online monitoring light level & temp. • total 1.8 Mrad, 1E13/cm2 (30 MeV p) • 24 hrs annealing with 10% recovery irradiated in 12 cycles, 1 min beam-on 4 min off ripple due to temp. rise at beam-on by 1oC to 25oC

  13. IUCF 200 MeV proton Irradiation • ECL 25MHz inputs • O/E probing for biCMOS driver wave form Before irradiation at fluence=3.0x1013 (1.4 Mrad GaAs 1.8 Mrad Si)

  14. Irradiation study : AC,DC modes • AC mode in 3 flux rate • 3.4, 11.5, 29.2 E9/cm2sec • Cumulative fluence: • 4.3, 12.8, 30 E12/cm2 200MeV p • ( 31, 91, 214 E12/cm2 1MeV n • 200, 600, 1400 krad ) • AC to DC mode • Cumulative fluence: • 6.8, 13.6 E12/cm2 200 MeV p • ( 48, 97 E12/cm2 1MeV n • 320, 640 krad )

  15. Irradiation study: flux rate, annealing • IUCF 200 MeV proton • DC mode, 3 flux rate, • 4.9, 7.2, 13.2 E9/cm2sec • 8 hrs annealing • Cumulative fluence: • 1.7, 5.1, 11.9 E12/cm2 200 MeV p • ( 12, 36, 85 E12/cm2 1 MeV n • 80, 240, 560 krad )  8hrs annealing

  16. Summary • CDF optical links are in stable service • daily maintenance are temperature, ECL related • Radiation tolerance is sufficient for the Run II program • irradiation tests  • laser light degradation is less than 10% at 200 krad • no damage observed on driver chip wave form

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