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SU-8 Process Summary1

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SU-8 Process Summary1

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    1. SU-8 Process Summary(1) Electrical via formation 90 ~100um thick SU-8 25 Substrate 2 X 3 glass plate Cleaning with TCE/Aceton/Methanol Dehydrate for 10-15min at 120C Spin - 500(rpm)/100(r/s)/10s, 650/500/30 Bake 1.5h ~ 2hr at 100C, a hot plate Exposure 400mJ with OAI 365nm Post bake from 50C to 95C(5min), 95C(25min), auto off , take out at 50C Nice cool-down Develop in PGMEA 3 ~ 4min

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