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1. Direct Imaging of Point Defects in SiliconKlaus van Benthem, University of California-Davis, DMR 0955638 NiSi/Si interfaces are considered for metal contacts in current CMOS technology. The interface structure in the presence of Pt thereby critically alters the corresponding Schottky barrier height. Atomic resolution aberration corrected scanning transmission electron microscopy (STEM) was used to investigate the wetting behavior of NiSi films on the (100) surface of Si substrates in the presence of Pt. An increased amount of Pt was found at the NiSi/Si interface which substitutes Ni atoms to form PtSi. The hence released Ni atoms diffuse into the Si substrate. STEM images reveal Ni atoms inside the Si substrate in substitutional (1) and three different less stable interstitial configurations (2-4). Si NiSi (4) (3) (1) (2) Pt (3) (4) (2) A.M. Thron & K. van Benthemet al. (in preparation)

2. Outreach through Mentoring Program & TEDKlaus van Benthem, University of California-Davis, DMR 0955638 1) PI van Benthem became director and faculty advisor of the UC Davis chapter for EnvironMentors, i.e. a national college access program. Underrepresented minority students were mentored by graduate students throughout inquiry-based research projects. Three winners were identified during a competitive poster session held during an annular Science Fair at UC Davis (see picture). Two of the three winners subsequently won the national competition at Washington, DC in May 2011 (www.environmentors.com). 2) Presentation of a TED talk entitled “Atoms—Legos for Scientists” (http://www.youtube.com/watch?v=v0uVl2suglg).