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Nanopillar Fabrication Protocol SNG4949U for Conductance Testing

This protocol outlines the fabrication process for nanopillars with specific guidelines for conductance testing, isolation of SiO2 buffer layer, and potential switching behavior evaluation. The inspection notes and recommendations for measurement are also included.

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Nanopillar Fabrication Protocol SNG4949U for Conductance Testing

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  1. Fabrication ProtocolSNG4949U Responsible: Pradeep Co-responsible: Dirk Date of delivery: 3/1/2011

  2. Sample Description A B • General remarks fabrication: • Height of pillars ~ 30 nm. • SiO2 buffer layer could be too thin. 1 • Tests to be carried out: • Conductance of contacts • Isolation of SiO2 buffer layer between top and bottom electrode • Evtl. switching behavior 2 Flat Flat

  3. Layout: 122110EBLpattern • All reticles have the same layout: • Columns 1, 27 & 28 of C-sites are empty • Columns 1 & 28 of B-sites are empty • Rest of the dice have the standard sized pillars (only back electrode pattern shown)

  4. Inspection - Description The inspection was carried out with: Optical microscope yes SEM yes, partly Legend:  Not inspected Nodefefectvisible, probablyusable Defect, probablyusable  Defect, probably not usable B Bottom elctrode E Empty dice (without pillar) T Top electrode G Gold pad N Nanopillar (BN or TN: Bottom or top electord around the nanopillar P Particle, dirt, residues etc. on die

  5. Inspection – Reticles in C-sites

  6. Inspection – Reticles in B-sites

  7. Recommendations for Measurement • No recommendations

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