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Fabrication Protocol SNG4949U

Fabrication Protocol SNG4949U. Responsible: Pradeep Co-responsible: Dirk Date of delivery: 3/1/2011. Sample Description. A. B. General remarks fabrication: Height of pillars ~ 30 nm. SiO2 buffer layer could be too thin. . 1. Tests to be carried out: Conductance of contacts

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Fabrication Protocol SNG4949U

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  1. Fabrication ProtocolSNG4949U Responsible: Pradeep Co-responsible: Dirk Date of delivery: 3/1/2011

  2. Sample Description A B • General remarks fabrication: • Height of pillars ~ 30 nm. • SiO2 buffer layer could be too thin. 1 • Tests to be carried out: • Conductance of contacts • Isolation of SiO2 buffer layer between top and bottom electrode • Evtl. switching behavior 2 Flat Flat

  3. Layout: 122110EBLpattern • All reticles have the same layout: • Columns 1, 27 & 28 of C-sites are empty • Columns 1 & 28 of B-sites are empty • Rest of the dice have the standard sized pillars (only back electrode pattern shown)

  4. Inspection - Description The inspection was carried out with: Optical microscope yes SEM yes, partly Legend:  Not inspected Nodefefectvisible, probablyusable Defect, probablyusable  Defect, probably not usable B Bottom elctrode E Empty dice (without pillar) T Top electrode G Gold pad N Nanopillar (BN or TN: Bottom or top electord around the nanopillar P Particle, dirt, residues etc. on die

  5. Inspection – Reticles in C-sites

  6. Inspection – Reticles in B-sites

  7. Recommendations for Measurement • No recommendations

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