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Recent Developments in Phase Change Memory: A Comprehensive Review

This review delves into the latest advancements in phase change memory technology, including the introduction of 3D XPoint by Intel and Micron, MLC PRAM chip by IBM, and the historical developments from Ovshinsky Innovation. It explores the challenges and potential of phase change memory, comparing it with other competitive technologies such as STT-MRAM, FeRAM, and ReRAM.

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Recent Developments in Phase Change Memory: A Comprehensive Review

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  1. A review of recent phase change memory developments Guy Wicker Ovshinsky Innovation wicker@ovshinskyinnovation.com

  2. Intel and Micron announce 3D XPoint Technology August 2015 IBM Announces MLC PRAM chip May 2016 OTS OMS

  3. Stanford Ovshinsky began research into 2 terminal switching devices in 1955 Nerve Impulse Paper June 15, 1955 Ovitron and RRAM development 1956-1963 Ovitron 1959 RRAM Patent 1963

  4. 1964 Patent application on Te alloy switching Devices U.S. Patent 3271591 Ovshinsky, S., “Reversible Electrical Switching Phenomena in Disordered Structures, ” Phys. Rev. Lett, V. 21, no. 20, pp. 1450-1453, Nov. 11, 1968.

  5. OTS isolated OMS memory was first reported at ECD in 1970 D. Nelson, Jan Helbers and Roy Shanks D.L. Nelson, “Ovonic Device Applications”, Journal Non-Crystalline Solids V2 pp528-539, 1970. Prior art to much of 3D-XPoint’s IP

  6. 1976 ECD Burroughs JV 1024 bits Fully Decoded Ovonic Memory Inc. and Intel 256bit Phase Change Memory 1970 1972 Prototype

  7. 1987 128X128X2 integrated OTS isolated OMS array

  8. Shortcomings of Memory • Speed 2) Reset Current

  9. Optical Disk Development 1984-1992 Rubin and Otah Compound materials for reversible, phase‐change optical data storage M. Chen, K. A. Rubin, and R. W. Barton,Applied Physics Letters 49, 502 (1986)

  10. 1991 Inadvertent Polymer film led to sub-2mA devices

  11. 1991 Device consistency allowed demonstration of Multilevel Storage

  12. 1991 First 225 electrically switched Phase Change Memory

  13. The Ovonic Threshold Switch can be used to implement logic with Higher speeds and more current drive than MOSFETs As an Isolation Element it can work with a wide variety of two terminal memories

  14. Competitive Technologies

  15. STT-MRAM Complex and expensive structure High speed and unlimited cycle life FeRAM Will be employed in 3-8 years high performance nonvolatile

  16. ReRAM Unclear what mechanisms are involved Oxide vacancies - Neville Mott Difficult Forming Low Cycle Life CB-RRAM Conductive bridge of metal ions Very low cycle life

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