2007 ITRS Emerging Research Materials April 25, 2007

1. 2007 ITRSEmerging Research MaterialsApril 25, 2007 Michael Garner – Intel Daniel Herr –SRC

2. 2006/7 ERM Participants Bob Allen IBM Yuji Awano Fujitsu Daniel-Camille Bensahel STM Chuck Black BNL Ageeth Bol IBM George Bourianoff Intel Alex Bratkovski HP William Butler U. of Alabama John Carruthers Port. State Univ. Zhihong Chen IBM U-In Chung Samsung Rinn Cleavelin TI Hongjie Dai Stanford Univ. Jean Dijon LETI Joe DeSimone UNC Satoshi Fujimura TOK Michael Garner Intel Emmanuel Giannelis Cornell Univ. Joe Gordon IBM Jim Hannon IBM Craig Hawker UCSB Rudi Hendel AMAT Susan Holl Spansion Dan Herr SRC Jim Hutchby SRC Antoine Kahn Princeton Univ. Sergie Kalinin ORNL Ted Kamins HP Masashi Kawasaki Tohoku Univ. Roger Lake U.C. Riverside Steve Knight NIST Gertjan Koster Stanford Univ. Louis Lome IDA Cons. Francois Martin LETI Andrew Millis Columbia Univ. Bob Miller IBM Chris Murray IBM Raravikar Nachiket Intel Paul Nealey U. Wisc. We-Xin Ni NNDL Dmitri Nikonov Intel Chris Ober Cornell Univ. Ramamoorthy Ramesh U.C. Berkeley Mark Reed Yale Univ. Dave Roberts Air Products Francis Ross IBM Sadasivan Shankar Intel Lars Samuelson Lund University Mitusru Sato TOK John Henry Scott NIST Atsushi Shiota JSR Kaushal K. Singh AMAT Susanne Stemmer UCSB Curt Richter NIST Shinichi Tagaki U of Tokyo Koki Tamura TOK Evgeny Tsymbal U. of Nebraska Emanuel TutucIBM John Unguris NIST Vijay Wakharkar Intel Kang Wang UCLA Rainer Waser Aacken Univ. C.P. Wong Ga Tech. Univ. H.S. Philip Wong Stanford University Hiroshi Yamaguchi NTT Toru Yamaguchi NTT In Kyeong Yoo Samsung Victor Zhirnov SRC

3. Emerging Research Materials • Develop ERM Chapter (2007) • Goal: Identify critical ERM technical and timing requirements • Consolidated Materials Research Requirements for: • University & Gov’t Researchers (Chemist, Materials Scientist, etc) • Industry Researchers • Semiconductor • Chemical, Material, & Equipment Suppliers • Align ERM Requirement to TWG Needs • Workshops to Assess ERM Properties & Research Directions

4. ERM Matrix Detailed TWG Requirements General TWG Interest to Date No TWG Interest to Date

5. ERM Scope • Cross Cutting Materials designed to address specific roadmap issues • Low Dimensional Nanomaterials • Macromolecules • Directed Self Assembly • Strongly Correlated Electron State Materials • Hetero-structures & interfaces • Spin Materials • Environment Safety & Health • Identify Research Needs For: • Synthesis • Metrology • Modeling

6. Emerging Research Materials Workshop Timetable • Low Dimensional Nanomaterials Completed • Devices, Interconnect, Package, FEP, Litho • Macromolecules Completed • Litho, FEP, Packages, Devices • Strongly Correlated Electron State Materials • ERD Completed • Directed Self Assembly Completed • Litho, Interconnects, FEP, ERD • ESH (Feb’07) Completed • Hetero-structures & Interfaces Completed • ERD, Interconnects, FEP, Package • Ferromagnetic Semiconductors (May ’07)

7. Emerging Research Devices Device StateMaterials • 1D Charge State (Low Dimensional) • Molecular State (Macromolecule) • Spin State (Spin Materials, SCEM) • Polarization State (Heterointerfaces) • Resistance State (Heterointerfaces) • Phase State (SCEM & Heterointerfaces) SCEM= Strongly Correlated Electron State Materials All Devices have critical interface requirements

8. Carbon Nanotube FET 1D Charge State Materials • Control of doping is a challenge for both nanotubes & nanowires Source Intel Atomically smooth Heterostructures (L. Samuelson, Lund Univ.) • Nanotube Challenges • Control of Location & • Orientation • Control of Bandgap • Contact Resistance Group IV & III-V Grow in 111 Orientation Catalyst determines location (T. Kamins, el. Al., HP)

9. Molecular State • Molecular Transport shows Tunneling & Hopping vs band transport • Metal-molecule potential barrier is high & the contact is very sensitive to hybridization • High fields in the barrier may dominate potential molecular conduction • Molecule & CNT contacts appear to have low transport barriers • p electrons in plane have low barrier to transport • Contact resistance in Molecules & Nanotubes increases with sigma bonding character; i.e. s bonding character; and p orbital misalignment for non-tunneling systems • Clean metal interfaces appear to form a dipole layer on organic materials

10. Spin State Overlapping Bound Magnetic Polarons, Coey, Nature 2005 Room temperature ferromagnetic semiconductors (T curie) Carrier mediated exchange • Need an accepted methodology for validating carrier mediated exchange • Gated test structures • Transport across interfaces depends on band symmetry • Physical disruption of symmetry can degrade transport • Consider size and strain effects on spin orbital splitting • Assess candidate material families, such as chalcopyrites Need Room Temp FM Semiconductor

11. Phase State & Heterostructures Tokura Tokura • Materials exhibit complex phase relationships • Structure, Strain, Spin, Charge, Orbital Ordering • Goal: Determine whether complex phases and coupled dynamic and static properties have any potential to enable alternate state logic devices Can these materials enable new device functions?

12. AlO2- LaO+ TiO20 SrO0 2D Electron Gas at SrTiO3-LaAlO3 Interface … RHEED excited Cathodoluminescence … Critical thickness J. Mannhart et. al. 2006 Augsburg Univ. Oxygen Vacancies D. Winkler, et. al. 2005 • Candidate materials include complex transition metal oxides Early results must be understood & validated

13. Lithography Macromolecular Architectures Resist: Unique Properties • Immersion: Low leaching & low surface energy • EUV: Low outgassing, high speed & flare tolerant Imprint Materials • Low viscosity • Easy Release Directed Self Assembly • Density, Size, Defects, LER, Shapes, & Alignment Molecular Glass & PAGS R. Allen, IBM R. Allen, IBM Polymer Design Ober, Cornell Dendrimers Di-block Copolymer self assembly P. Nealey, U. Wisc.

14. Potential FEP Applications For Extreme CMOS • Directed Self Assembly for Deterministic Dopant Placement • Self Assembly for Selective Etch • Macromolecules for Selective Etch & Cleaning

15. Potential Interconnect Applications Vias • Multi & single walled CNT • Metal nanowires • Higher density • Contact Resistance • Adhesion Interconnects • Metallic CNTs • Metallic Nanowires • Alignment • Contact Resistance Y. Awano, Fujitsu H. Dai, Stanford Univ. E-Field Align100Volts Quartz Crystal Step Alignment

16. 4 Die Stack 4 Die Stack with Large Overhang Package • Package Electrical & Thermo-Mechanical • Substrate: Nanoparticles, Macromolecules • Polymers & Molding Compound: Nanoparticles & macromolecules • Adhesives: Macromolecules, nanoparticles • Chip Interconnect: Nanotubes & nanosolders High Density Power Delivery Capacitors Dielectrics: High K Self Assembly Interconnects: Nanotubes or Nanowires

17. ESH • Researchers need to perform hazard & risk assessment on new materials • Establish handling practiced based on risk levels • Hierarchy of assessment based on maturity of materials application & hazard research • Integrate ESH factors into materials design

18. Metrology & Modeling • Metrology • Low dimensional material properties (Mapping) • Correlation of nanostructure to macro properties • Imbedded interface characterization • Nanostructure characterization of low z materials • Modeling Materials & Interfaces • Deterministic dopant placement effect on electrical properties • Nanomaterial synthesis & properties • Self assembled materials structures & their properties & defects • Heterointerface electronic & spin transport properties & 2D effects • Metrology & modeling must be able characterize & predict performance & reliability

19. Difficult Challenges • Characterization of the nanostructure to property correlation • Control of Nanostructure & Properties • Self Assembly control of structure, defect, registration • Identifying critical properties for alternate state devices & their interfaces • Characterizing electronic & spin properties of embedded interfaces/matrixes • Assessment of potential ESH hazards and risk of ERM

20. Summary • Aligning Requirements with TWGs • Developing Tables • Most Workshops Completed • Scope refined based on TWG applications