2012 ITRS Emerging Research Materials [ERM] December 5, 2012

1. 2012 ITRSEmerging Research Materials[ERM]December 5, 2012 C. Michael Garner, GNS/Stanford Hiro Akinaga, AIST Dan Herr, UNCG

2. 2012 ERM Participants Yoshiyuki Miyamoto AIST Kei Noda Kyoto University Yaw Obeng NIST Chris Ober Cornell Univ Matsuto Ogawa Kobe University Katsumi Ohmori. TOK Yutaka Ohno Nagoya University Tomas Palacios MIT Samuel Pan TSMC Er-Xaun Ping AMAT Joel Plawsky RPI Dave Roberts Nantero Tadashi Sakai Toshiba Gurtej Sandhu Micron Hideyki Sasaki Toshiba Nanoanalysis Shintaro Sato AIST Akihito Sawa AIST Barry Schechtman INSEC Sadasivan Shankar Intel Matt Shaw Intel Takahiro Shinada AIST Michelle Simmons UNSW Kaushal Singh AMAT . Satofumi Souma Koube Univ Naoyuki Sugiyama Toray Shin-ichi Takagi U. of Tokyo Masahiro Takemura NIMS Koki Tamura TOK America Yoshihiro Todokoro NAIST Yasuhide Tomioka AIST Luan Tran TSMC Peter Trefonas Dow Ming-Jin Tsai ITRI Wilman Tsai Intel Emanuel Tutuc UT Austin Ken Uchida Keio Univ. Kang Wang UCLA H.S. Philip Wong Stanford U. Dirk Wouters IMEC Wen-Li Wu NIST Shigeru Yamada Ibiden Hiroshi Yamaguchi NTT Toru Yamaguchi NTT Fu-Liang Yang NDL Hiroaki Yoda Toshiba Victor Zhirnov SRC Paul Zimmerman Intel Ehrenfried Zschech Fraunhofer Inst. HiroAkinaga AIST Tsuneya Ando Tokyo Inst. Tech Nobuo Aoi Panasonic Bernd Appelt ASE Koyu Asai Renesas Yuji Awano Keio Univ Daniel-Camille Bensahel ST Micro Kirill Bolotin Vanderbilt Univ. Bill Bottoms Nanonexus George Bourianoff Intel Bernard Capraro Intel Arantxa Maestre-Caro Intel John Carruthers Port. State Univ. An Chen Global Foundry Zhihong Chen IBM Joy Cheng IBM Byung Jin Cho KAIST Luigi Colombo TI Geraud Dubois IBM Catherine Dubourdieu Inst. Nanotech. de Lyon Nathan Fritz Intel . . Michael Garner GNS/ Stanford Michael Goldstein Intel Wilfried Haensch IBM Dan Herr UNCG/JSNN ChiaHua Ho NDL Jim Hutchby SRC Berry Jonker NRL Ted Kamins Stanford U. Leo Kenny Intel Choong-Un Kim UT Arlington Sean King Intel Atsuhiro Kinoshita Toshiba Paul Kohl Ga Tech Blanka Magyari-Kope Stanford U. Ming-Hsiu (Eric) Lee Macronix Yao-Jen Lee NDL Liew Yun Fook A-Star Timothy E. Long VA Tech Prashant Majhi Intel Francois Martin LETI Fumihiro Matsukura Tohoku U. Nobuyuki Matsuzawa Sony Jennifer Mckenna Intel

3. 2012 Key Messages • 2011 ERM Chapter will not be updated in 2012 • ERM is preparing for 2013 ITRS Rewrite • Aligning with iTWG New Requirements • Planning e-Workshops • Identifying potential material transitions • Identifying support capabilities needed • Significant Challenges for all Materials

4. Memory Materials • Ferroelectric Memory • Nanoelectromechanical (NEMM) • Redox RAM • Mott Memory • Macromolecular • Molecular

5. Extending CMOS Logic Alternate Channel Materials MOS Alternate Channel Materials -n-Ge & p-III-V -Nanowires -Graphene -Carbon Nanotubes Assess Materials Performance Gate materials Contacts Interfaces III-V Heterostructures (L. Samuelson, Lund Univ.) A. Geim, Manchester U. -Identify Novel Metrology & Modeling Needs D. Zhou, USC

6. Beyond CMOS LogicMaterials & Interfaces States Other Than Charge Only Charge Based Ferroelectric Polarization Spin State Assess • Ferromagnetic Materials, Dilute Magnetic Semiconductors • Complex Metal Oxides • Strongly Correlated Electron State Materials (FE, FM, FE & FM) • Molecules • Interfaces • Individual or • Collective Negative Capacitance FET

7. ERM Device Material e-Workshops • Redox RAM Materials • Deterministic and Conformal Doping • Nanoscale Contact Resistivity • Carbon Electronics (Nanotubes and Graphene) • Spin Materials & Out of Plane MTJ Materials • Strongly Correlated Electron Materials • Modeling of Complex Transition Metal Oxide Properties

8. Lithography Materials LER Rectification Contact/Via Rectification Density Multiplication • Continuing evaluation of novel resist for 193i and EUV • LER Rectification to reduce LER and improve line CD control • Contact/Via Rectification to reduce size and improve CD control • Pattern Density Multiplication for high density smaller features Stoykovich, et. al. Macromolecules, 2010 Ruiz, et. al. Science, 2008

9. Survey on DSA • Contact rectification and pattern density multiplication had the highest support • Most industry responders had plans to evaluate DSA

10. Wire Wire Via Via Interconnect Materials Interconnects • Ultra-thin Barrier Layers (sub 2nm) • NH2 terminated Self Assembled • Monolayers (SAM) • Graphene • Ultra low κ ILD • Integration must be a significant focus • Novel Interconnects & Vias • Graphene, Carbon Nanotubes, Nanocomposites • Workshops • Ultralow k ILD: Completed • Ultrathin Cu Barrier Layers: Completed

11. Assembly & Packagee-Workshops • Residue Free Adhesives • Insulating polymers with high in plane thermal conductivity [3-5 W/m-K] • Electrically conductive flexible adhesive contact material for heterogeneous integration • <200C process temperature photopatternable dielectric interposer • Nanosolders with high electrical and thermal conductivity • Novel EMI shielding materials (graphene, CNT, etc.)

12. Hexagon of Assembly Material Requirements Examples Thermal Interface Mat. Mold Compound Underfill Adhesives Epoxy Functional Properties • Highly coupled Material Properties • Apply novel materials to achieve optimal performance Moisture Resistance Adhesion Fracture Toughness Modulus CTE CTE depends on volume fraction

13. ESH Challenges • Materials needed to overcome significant technical challenges • Low energy processes and new materials for low energy integrated circuits • Few materials can meet requirements • Some materials have known hazards or uncharacterized ESH properties • Stimulate ESH research in uncharacterized materials • Good risk management methods for materials ESH in Research, Development & Manufacturing • Lifecycle Assessment & Management • Efficient use of materials

14. Summary • 2011 ERM Chapter will not be updated in 2012 • ERM is preparing for 2013 ITRS Rewrite • Aligning with iTWG New Requirements • Planning e-Workshops • Significant Challenges for all Materials

15. Back-up