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FP7-ICT-2007-2 HELIOS Large-scale Integrating Project Large-scale integrating project (IP)

FP7-ICT-2007-2 HELIOS Large-scale Integrating Project Large-scale integrating project (IP) ICT Call 2 FP7-ICT-2007-2 p H otonics EL ectronics functional I ntegration on CM OS HELIOS Date of preparation : 09.10.2007 Type of funding scheme: Large-scale integrating project (IP)

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FP7-ICT-2007-2 HELIOS Large-scale Integrating Project Large-scale integrating project (IP)

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  1. FP7-ICT-2007-2 HELIOS Large-scale Integrating Project Large-scale integrating project (IP) ICT Call 2 FP7-ICT-2007-2 pHotonics ELectronics functional Integration on CMOS HELIOS Date of preparation: 09.10.2007 Type of funding scheme: Large-scale integrating project (IP) Work programme topics addressed: ICT-2007.3.5: Photonic components and subsystems Name of the coordinating person: Laurent Fulbert e-mail: Laurent.fulbert@cea.fr • Objectives: to build a complete design and fabrication chain enabling the integration of a photoniclayer with a CMOS circuit, using microelectronics fabrication processes. It will make accessible integration technologies for a broad circle of users in a foundry-like, fabless way

  2. WP1 WP1 : : Roadmapping Roadmapping and and exploitation exploitation source source modulator modulator packaging packaging photodetection photodetection passive circuitry passive circuitry dissemination dissemination concept concept WP2: WP2: WP3: WP3: of of WP6: WP6: and and Project management Project management WP5: WP5: WP4: WP4: proof proof training training : : WP7: integration with CMOS innovative innovative WP12: WP12: WP0 WP0 WP11: WP11: WP10: WP10: WP8: WP8: WP9: WP9: Photonic Photonic QAM QAM Modulator Modulator Transceiver Transceiver Wireless Wireless demonstrator demonstrator demonstrator demonstrator transmission transmission demonstrator demonstrator • Different activities: • Developing the whole “food chain” • high performance generic building blocks • Demonstrating the power of this approach through demonstrators addressing different industrial needs • photonics/electronics convergence at the process level and design level • Preparing the future by exploring alternative approaches that offer clear advantages in terms of integration on CMOS.

  3. WP11: INNOVATIVE PROOF OF CONCEPTS (CNRS) Task 11.1 Amorphous Si modulator (IMM) Exploit amorphous silicon (a-Si:H) as a material to form a modulator to be fabricated at the end of the CMOS process. We plan to design, fabricate and characterise field-effect driven elements. The proposed basic technology is shown, with possible changes in the cladding layer. The proposed stacked modulator scheme highly enhances the electro-optical effects in the region where they are more effective on the propagating beam.

  4. Task 11.2: Silicon nanocrystals for light emission and amplification (UNITN) • Realize an injection silicon laser based on active Er impurities which are excited via electrical injection into Si-nc embedded in a dielectric (oxide, nitride) • 1. LED with Si-nc emitting at 0.75 μm with EQE of about 1% and a turn on voltage of less than 5V • 2. LED with Er coupled to Si-nc emitting at 1.55 μm with same EQE and turn on voltage • 3. Waveguide amplifiers with Er coupled to Si-nc, electrically driven and having a gain of 10 dB • 4. Injection silicon laser emitting at 1.55 μm

  5. Task 11.3 Novel concepts of heterogeneous integration (CNRS) This task will concentrate on the development of an innovative technological/conceptual scheme for 3D microphotonics on CMOS based on III-V/Silicon heterogeneous integration and diffractive photonics and opens the way to far larger functionality and wider potential impact than in the version of INTEL/PICMOS

  6. IMM funding: Uni-RC IMM-BO IMM-Na Project duration: 48 months RTD (A) [75%]: personnel, other direct costs [project specific materials needed for cleanroom, silicon substrates, process gases, chemicals, targets, consumables for polishing: 30k€; parts needed for demonstrators (photomasks, fibers, glues): 5 k€; travels: 10k€] OTHER (D) [100%]: networking, organisation, dissemination (publications, participation to seminars, training) (indirect costs: 86,96% of personnel cost)

  7. 0.2 micron 1.5 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 1 micron 1 micron 1 micron 1 micron 1 micron 1 micron 1 micron ZnO 1 micron c-Si tipo n c-Si tipo p c-Si tipo n c-Si tipo p 0.5 micron 0.5 micron 0.5 micron 0.5 micron ZnO 0.5 micron 0.5 micron 6 strati SOTTILE: guide 0.2 micron, totale 1.2 micron Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN Tre strati Barriera: aSiCN 29 nm Cladding: nitruro 2 strati, ultra SOTTILE: guide 0.125 micron, totale 0.25 micron Barriera: aSiCN 40 nm Cladding: nitruro Ultima barriera: aSiCN ‘simmetrico’ Barriera: aSiCN 30 nm Cladding: nitruro 5 strati DROGATO: guide 0.25 micron, totale 1.25 micron Barriera: aSiC 40 nm Cladding: 1.1 micron SiO2 Ultima barriera: SI Contatto ZnO 3 strati Barriera: aSiCN 30 nm Cladding: nitruro Ultima barriera: aSiCN 5 strati intrinseco in MDZ3: guide 0.25 micron, totale 1.25 micron Barriera: aSiC 40 nm Cladding: 1.1 micron SiO2 Ultima barriera: SI Contatto ZnO 6 strati Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN

  8. Segnale elettrico modulante Segnale ottico in uscita dalla guida

  9. 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 6 strati SOTTILE: guide 0.2 micron, totale 1.2 micron Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN

  10. 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron ZnO

  11. 0.2 micron 0.2 micron 0.2 micron 0.2 micron 0.2 micron ITO

  12. 14167 a-Si:H 1.204mm SiO2 R (%) 265 nm roughness 16211 A a-Si:H 663 A ITO2 3120 A SiO2 R (%)

  13. 0.2 micron 0.2 micron 0.2 micron 0.2 micron Spin-on-Glass 0.2 micron ITO

  14. EXPERIMENTAL ACTIVITY • The following activities were performed • study and optimisation of the films: • a-Si:H, SixN1-x, a-SiC:H, a-SiCN films deposited and characterised, each in different stoichiometric compositions • outcome: a-SiC:H will be used as insulator in future devices electrical characterisation optical characterisation

  15. speed issues speed depends on =RC, where R  resistivity of a-Si:H C   doping has a key role tSiC log(electron, cm-3) simulated elec. conc. vs. time at the internal a-Si:H/insulator interfaces for different conductivities of a-Si:H (undoped) log (time,s)

  16. Aumenta la velocità Drogaggio Aumenta l’assorbimento 80 sccm SiH4 0.9 sccm PH3 Ea = 0.16 eV sD = 5.6 E-3 (W cm)-1 Simulazione nir: F=30° KIR inferiore a 0.001

  17. Misure ellissometro su modulatore polarizzato V aumenta Red shift: aumenta nd Wavelength (nm)

  18. Meeting annuale: 16 giugno GRAZ

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