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sapphire

P. P. P- GaN (7 ×10 17 cm -3 ). P- GaN (7 ×10 17 cm -3 ). In 0.2 Ga 0.8 N / p- GaN MQW. 0.2um. 0.2um. In 0.2 Ga 0.8 N / p- GaN MQW. 20nm. n- GaN. n- GaN. N. N. three of middle ： p- GaN barriers. undoped nucleation GaN. undoped nucleation GaN. 4.5um. 4.5um.

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sapphire

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  1. P P P-GaN (7 ×1017 cm-3) P-GaN (7 ×1017 cm-3) In0.2Ga 0.8N / p-GaN MQW 0.2um 0.2um In0.2Ga 0.8N / p-GaN MQW 20nm n-GaN n-GaN N N three of middle： p-GaN barriers undoped nucleation GaN undoped nucleation GaN 4.5um 4.5um sapphire sapphire n-Al 0.07Ga 0.93N HBL (5×1018 cm-3 ) (5×1018 cm-3 ) 50nm 50nm structure C structure D Fig. 1. LEDs with p-type doped barriers but without an EBL (structure C), and non-EBL LEDs with p-type doped barriers and a HBL (structure D).

  2. Structure A、B、C、D結構差異表

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