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1 - 5  m. Side view. Au electrode. SiO 2. FeGa. SiO 2. 100nm. 70nm. PZT (70/30) ‏. 70nm. Pt. Fabrication of a non-volatile multiferroic memory device. Micron-sized non-volatile magnetoresistance devices are being pursued using ferroelectric/ magnetostrictive multilayers.

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  1. 1 - 5m Side view Au electrode SiO2 FeGa SiO2 100nm 70nm PZT (70/30)‏ 70nm Pt Fabrication of a non-volatile multiferroic memory device Micron-sized non-volatile magnetoresistance devices are being pursued using ferroelectric/ magnetostrictive multilayers. PZT (30/70)‏ SEM image Previously, we have demonstrated reversible ferroelastic domains in PZT ferroelctric bilyaers (Adv. Materials 21, 3497 (2009)). In such bilayers, different elastic states can be achieved through reversible twin boundary motions induced by small voltage pulses. The elastic states are used to tune magnetic anisotropy in FeGa layer. Au leads 3 mm PZT grain FeGa layer Takeuchi, UMD UMD MRSEC DMR0520471

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