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Performance test of the SOI pixel detector

Performance test of the SOI pixel detector. Hideki MIYAKE (Osaka University) for SOIPIX group. Oct.31, 2006 DPF-JPS joint meeting@Hawaii. Introduction Radiation damage test. H.Ishino. TCAD simulation study. M.Hazumi. Performance test. This talk. Related talks. SOIPIX collaborators.

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Performance test of the SOI pixel detector

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  1. Performance test of the SOI pixel detector Hideki MIYAKE (Osaka University) for SOIPIX group Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  2. Introduction Radiation damage test H.Ishino TCAD simulation study M.Hazumi Performance test This talk Related talks

  3. SOIPIX collaborators KEK Detector Technology Project : [SOIPIX Group] Y. Arai*, Y. Ikegami, H. Ushiroda,Y. Unno, O. Tajima, T. Tsuboyama,S. Terada, M. Hazumi, H. IkedaA,K. HaraB, H. IshinoC, T. KawasakiD, H. MiyakeE, G. VarnerF, E. MartinF, H. TajimaG, M. OhnoH, K. FukudaH, H. KomatsubaraH, J. IdaH, H. HayashiH KEK、JAXAA, U. TsukubaB, TITC,Niigata U.D, Osaka U.E, U. HawaiiF, SLACG, OKI Elec. Ind. Co.H (*)—contact person Financial Support by KEK Detector Technology Project

  4. List of 2005 TEG Our fully-Depleted CMOS SOI TEG is fabricated by OKI Electric Industry Co. Ltd. - commercial technology with 150nm rule

  5. Performance testOUTLINE • Strip TEG • I-V characteristics • Laser pulse scan • Pixel TEG • I-V characteristics • Laser image view • Beta source

  6. 2.5mm Short p+-strip (length:460um) Window for Light Illumination This one! Bonding Pad Strip TEG We fabricated two types of chips with a different resistivity. (standard and high resistive type) This time we evaluated the high resistive type. (N-type~700Ωcm ~6✕1012 cm-3)

  7. Substrate-strip I-V I(A) 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-4 10-5 10-6 10-7 10-8 10-9 10-10 10-11 w/FET electrodes I Type8 Type7 Breakdown Type4 Type3 Type2 I Type1 strip-strip I-V 0 10 203040 50 60 (V) ohmic Type5 Type6 w=10um w=30um FET 0 10 203040 50 60 (V) w=40um p-n junction exists Breakdown:50~60V Strip I-V characteristics • Different strip structures • Strip width • FET electrodes n w p-strip

  8. Laser Pulse Microscope Laser Amp SoI n-bias • We used two types laser: • Diode laser Hamamatsu PLP-01 (λ=859nm) • Diode laser PicoQuant PDL-800B (λ=980nm) Laser 270KΩ SoI chip p Amp (CS527) 50MΩ

  9. 859nm • Unfocused • Pulses are seen at all 3 channels Note:Most right strips are coupled 2 4 1 980nm • Focused (microscope) • Only one channel shows the pulse good channel separation! 2 4 4 2 1 Pulse Shape

  10. No saturation until breakdown Not yet fully depleted Hot Spot search is necessarylater Charge collection efficiency Focused Laser Pulse height depends on Vback 980nm

  11. Laser Scan SOI chip • Focused 980nm Laser is injected on movable stage. • Two windows for light injection • When laser light hits the readout metal traces, the observed charge reflect the light • Reasonable charge collection and separation between strips is confirmed. Laser 980nm

  12. Pixel TEG CMOS Active Pixel Sensor Type 20 mm x 20 mm 32 x 32 pixels Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  13. Pixel Layout Window for Light Illumination (5.4 x 5.4 um2) 20 mm(pixel) p+ junction 2.5 mm (chip) 2.5 mm (chip) Storage Capacitance (100 fF) 6" MPW wafer

  14. Weak Light • The ramp up speed differs depending on the light intensity. No Light No Light Strong Light Pixel first signal! • Vback=5V • Flashlight Reset-Integrate-Readout Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  15. Pixel I-V characteristic Breakdown:~100V Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  16. Hot Spot search Breakdown:~100V Hot Spot observed with infrared camera corner of the bias ring I = 40 A, T = 1 min  Smooth the corner and move the ring inward at next submission. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  17. Photo Image Plastic Mask (mm) 0.6 0.5 0.4 0.3 0.2 0.1 0 (mm) 0.6 0.5 0.4 0.3 0.2 0.1 0 Laser (670 nm) Vdet = 10 V 0 0.1 0.2 0.3 0.4 0.5 0.6 (mm) 0 0.1 0.2 0.3 0.4 0.5 0.6 (mm) Exposure Time = 7 ms • 32x32 image view with 670nm Laser and plastic mask Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  18. Response to beta source • Performance test as a particle detector Pixel sensor 90Sr source • Output of one channel is observed with oscilloscope. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  19. Response to beta source • Expected signal amplitude was observed for b-ray. • The voltage jump corresponds to particle hit. Vdet = 10 V Wdepletion ~ 44 m Q ~ 3500 e(0.6 fC) Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  20. Summary • We tested basic performance of SOI detector fabricated in a commercial 0.15 m SOI CMOS process. • Short strip sensor shows p-n junction and good channel separation with infrared laser light. • Pixel sensor shows good image ‘KEK06’ with red laser light. • Signal for-ray from 90Sr is observed. • Break down voltage of present pixel sensor is about 100V and hot spot is identified. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  21. Let’s enjoy Hawaii! Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  22. Let’s enjoy Hawaii! Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  23. Oct.31, 2006 DPF-JPS joint meeting@Hawaii

  24. 補足

  25. Hot Spot search for Strip TEG Hot spots are seen at edge of strips

  26. PD vs. FD IBM PowerPC, AMD Athlon,Sony Cell … OKI Radio Controlled Wrist Watch (CASIO)

  27. '05 10 Submission Layouts

  28. Previous Activity Processed in Lab. with ~3m technology. Ended at 2004?

  29. n+ contact Contact & Sheet Resistance Hi-R (> 1k Wcm) Std. wafer (p+, ~13 Wcm) p+ contact [Sheet R] n+ : 33 W/square p+ : 136 W/square [Contact](0.16x0.16um2) n+ : 87 W p+ : 218 W Hi-R (> 1k Wcm) Std. wafer(p+, ~13 Wcm)

  30. Pixel Leak current I ~ 150 fA/pixel

  31. Unfocused Laser V dependence of the pulse height No saturation until breakdown 859nm Note:Ch2Ch4 are swapped Focused Laser 980nm 980nm

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